IXFN130N30 IXYS, IXFN130N30 Datasheet
IXFN130N30
Specifications of IXFN130N30
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IXFN130N30 Summary of contents
Page 1
... GH(th GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle © 2003 IXYS All rights reserved IXFN 130N30 Maximum Ratings 300 = 1 M 300 130 100 520 JM 100 DSS 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 ...
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... Pulse test, t 300 s, duty cycle 30A, -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 14500 2650 610 ...
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... I - Amperes D Figure 3. R normalized to 0.5 I DS(on) vs 150 125 100 -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2003 IXYS All rights reserved V =10V 200 250 value D25 120 75 100 125 150 IXFN 130N30 200 V =10V GS T =125 O C ...
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... Figure 9. Forward Voltage Drop of the Intrinsic Diode 0.100 0.010 0.001 - Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 18000 15000 12000 9000 6000 3000 0 400 500 0 Figure 8 ...