IXTN320N10T IXYS, IXTN320N10T Datasheet

no-image

IXTN320N10T

Manufacturer Part Number
IXTN320N10T
Description
MOSFET N-CH 100V 320A SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXTN320N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
320A
Vgs(th) (max) @ Id
4.5V @ 1mA
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
320
Rds(on), Max, Tj=25°c, (?)
0.0032
Ciss, Typ, (pf)
22600
Qg, Typ, (nc)
375
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
680
Rthjc, Max, (k/w)
0.22
Package Style
SOT227
Power - Max
-
Gate Charge (qg) @ Vgs
-
Rds On (max) @ Id, Vgs
-
Other names
IXTH320N10T
Q3347867
TrenchMV
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
I
E
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All rights reserved
D25
D90
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
V
Test Conditions
ISOL
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 90°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
Power
D
D
D
= 3mA
= 1mA
= 0.5 • I
DS
= 0V
t = 1 Minute
t = 1 Second
D25
GS
, Note 1
= 1MΩ
T
Preliminary Technical Information
J
= 150°C
JM
IXTN320N10T
-55 ... +175
-55 ... +175
Maximum Ratings
Characteristic Values
100
Min.
2.5
1.3/11.5
1.5/13
2500
3000
240
100
100
±20
±30
320
200
700
680
175
300
260
2.3
30
80
Typ.
2.6
±200 nA
Nm/lb.in.
Nm/lb.in.
4.5
Max.
1.5 mA
3.2 mΩ
25
V~
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
g
J
V
I
R
Either Source Terminal S can be Used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
miniBLOC, SOT-227
G = Gate
S = Source
D25
Power Supplies
International Standard Package
miniBLOC, with Aluminium Nitride
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Switched-Mode and Resonant-Mode
DC Choppers
Applications
Isolation
AC and DC Motor Drives
Low R
Easy to Mount
Space Savings
High Power Density
DC-DC Coverters
Battery Chargers
Uninterrupted Power Supplies
High Speed Power Switching
DS(on)
DSS
E153432
DS(on)
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
3.2mΩ Ω Ω Ω Ω
100V
320A
D
DS99833A(01/09)
S

Related parts for IXTN320N10T

IXTN320N10T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTN320N10T Maximum Ratings 100 = 1MΩ 100 GS ±20 ±30 320 240 200 700 JM 80 2.3 680 -55 ... +175 175 -55 ... +175 300 260 2500 3000 1 ...

Page 2

... I = 0.5 • DSS D D25 120 0.05 Characteristic Values Min. Typ. JM 100 6.4 320 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN320N10T Max. SOT-227B (IXTN) Outline (M4 screws (4x) supplied 0.22 °C/W °C/W Max. 320 A 1000 A 1 6,404,065 B1 ...

Page 3

... Value 320A 160A D 75 100 125 150 175 200 180 160 140 120 100 75 100 125 150 175 IXTN320N10T Fig. 2. Output Characteristics @ 150º 15V GS 10V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 Volts DS Fig Normalized to I DS(on) vs ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN320N10T Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 150º 0.2 0.3 0.4 0.5 0.6 0 Volts SD Fig. 10. Capacitance ...

Page 5

... V = 10V 50V DS 250 80 200 70 150 60 50 100 40 30 140 160 180 200 IXTN320N10T Fig. 13. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 50V 25ºC, 125º 100 120 140 I - Amperes D Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature ...

Related keywords