IXTN320N10T IXYS, IXTN320N10T Datasheet - Page 3

• Manufacturer Part Number: IXTN320N10T
• Description: MOSFET N-CH 100V 320A SOT-227B
• Manufacturer: IXYS

Specifications of IXTN320N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0032
• Ciss, Typ, (pf): 22600
• Qg, Typ, (nc): 375
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22
• Package Style: SOT227
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -
• Other names: IXTH320N10T; Q3347867

© 2009 IXYS CORPORATION, All rights reserved
220
200
180
160
140
120
100
320
280
240
200
160
120
80
40
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
0
0
-50
0.0
-50
Fig. 3. R
V
Fig. 5. Drain Current vs. Case Temperature
0.2
GS
-25
V
-25
GS
= 10V
External Lead Current Limit
0.4
= 15V
Fig. 1. Output Characteristics
10V
8V
0
DS(on)
0
vs. Junction Temperature
0.6
T
C
T
25
- Degrees Centigrade
25
J
Normalized to I
0.8
- Degrees Centigrade
5V
7V
6V
V
50
@ 25ºC
1.0
50
DS
- Volts
1.2
75
75
I
D
1.4
= 320A
100
100
D
= 160A Value
1.6
125
125
I
D
1.8
= 160A
150
150
2.0
175
175
2.2
200
180
160
140
120
100
320
280
240
200
160
120
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
40
0
0
3.4
0.0
0
Fig. 4. R
0.2
V
GS
40
3.8
= 10V
0.4
15V
Fig. 2. Output Characteristics
DS(on)
0.6
80
Fig. 6. Input Admittance
- - - - -
4.2
0.8
vs. Drain Current
Normalized to I
120
V
V
1.0
I
GS
V
4.6
D
GS
@ 150ºC
DS
T
- Amperes
J
- Volts
= 15V
160
1.2
= 150ºC
- Volts
10V
8V
7V
IXTN320N10T
5.0
1.4
200
1.6
D
25ºC
5.4
= 160A Value
T
T
1.8
240
J
J
6V
5V
= 175ºC
= 25ºC
IXYS REF: T_320N10T(2x6V)01-27-09
2.0
5.8
280
- 40ºC
2.2
2.4
320
6.2