IXFN100N10S1 IXYS, IXFN100N10S1 Datasheet
IXFN100N10S1
Manufacturer Part Number
IXFN100N10S1
Description
MOSFET N-CH 100V 100A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN100N10S1.pdf
(2 pages)
Specifications of IXFN100N10S1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
360W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
100
Id90, Tc = 90°c, (a)
75
Rds(on), Max, Tj = 25°c, (mohms)
12
Tf, Typ, (ns)
30
Tr, Typ, (ns)
70
Rthjc, Max, (ºc/w)
0.35
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN100N10S1
Manufacturer:
IXYS
Quantity:
200
«=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ
HiPerFET
with Schottky Diodes
m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë
Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
V
I
I
I
(dv/dt)
P
T
T
T
V
M
Weight
DM
RMS
FAVM
FRM
D25
AR
JM
GSM
AR
RRM
J
stg
DSS
DGR
GS
D
D
ISOL
d
CR
TM
Test Conditions
p
m
fpli
g
g
`
`
`
g
`
`
`
Power MOSFETs
aj
d
dp
aa
gj
app
J
IXFN 100N10S1
IXFN 100N10S2
IXFN 100N10S3
S1
Maximum Ratings
S2
miniBLOC, SOT-227 B
Features
Applications
Advantages
V
I
R
D25
DSS
c
DS(on)
ap=EçåF
E153432
= 100
= 100
=
qj
S3
VUSQM^= ENOLMMF
15 m
V
A
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IXFN100N10S1 Summary of contents
Page 1
... HiPerFET TM Power MOSFETs with Schottky Diodes m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë ...
Page 2
... Schottky Diode Symbol Test Conditions I o= ooj ooj thJC R thJK IXYS reserves the right to change limits, test conditions, and dimensions. IXFN 100N10S1 Characteristic Values g min. typ. max. a aOR a aOR o Characteristic Values g min. typ. max IXFN 100N10S2 IXFN 100N10S3 miniBLOC, SOT-227 B aá ...