IXFN100N10S1 IXYS, IXFN100N10S1 Datasheet - Page 2

• Manufacturer Part Number: IXFN100N10S1
• Description: MOSFET N-CH 100V 100A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN100N10S1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 360W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 100
• Id90, Tc = 90°c, (a): 75
• Rds(on), Max, Tj = 25°c, (mohms): 12
• Tf, Typ, (ns): 30
• Tr, Typ, (ns): 70
• Rthjc, Max, (ºc/w): 0.35
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Schottky Diode
Symbol
I
V
R
R
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
I
R
R
R
RM
GSS
DSS
d(on)
d(off)
r
f
rr
F
fs
thJC
thJK
GS(th)
SD
thJC
thCK
DSS
DS(on)
iss
oss
rss
g(on)
gs
gd
RM
c
c
c
c
c
g=
o=
dp
dp
dp
dp
dp
dp
d
dp
ap
ap
ap
g====
Test Conditions
Test Conditions
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dp
app
a
a
a
dp
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dp
dp
ap
a
a
dp
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ap
ap
ap
ooj
aOR
aOR
app
app
a
o
a
Characteristic Values
g=
g=
g
g
aOR
aOR
min.
min.
Characteristic Values
typ.
typ.
IXFN 100N10S1
max.
max.
miniBLOC, SOT-227 B
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b
c
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