IXFN230N10 IXYS, IXFN230N10 Datasheet - Page 5

• Manufacturer Part Number: IXFN230N10
• Description: MOSFET N-CH 100V 230A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN230N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 230A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 570nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 230 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 230
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 570
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1,000
100
10
1
1
Fig. 13. Forward-Bias Safe Operating Area
External-Lead Limit
R
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 25ºC
Limit
@ T
V
DS
- Volts
C
10
= 25ºC
100
DC
100ms
100µs
1ms
10ms
1,000
100
10
1
1
Fig. 14. Forward-Bias Safe Operating Area
R
DS(on)
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
Limit
@ T
V
DS
- Volts
C
10
= 75ºC
IXFN230N10
IXYS REF: F_230N10(9Y-N17)12-02-08-D
100
100ms
DC
25µs
100µs
1ms
10ms