IRKT91/08A Vishay, IRKT91/08A Datasheet - Page 2

• Manufacturer Part Number: IRKT91/08A
• Description: SCR DBL 2SCR 800V 95A ADD-A-PAK
• Manufacturer: Vishay

Specifications of IRKT91/08A

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 95A
• Current - On State (it (rms)) (max): 210A
• Current - Non Rep. Surge 50, 60hz (itsm): 1785A, 1870A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKT91/08A; IRKT91/08; IRKT91/08; VS-IRKT91/08A; VS-IRKT91/08A; VSIRKT91/08A; VSIRKT91/08A

IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
2
(1) I
(4) I > π x I
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
2
T(AV)
F(AV)
O(RMS
TSM
FSM
2
H
L
t
√t
TM
T(TO)
FM
t
IRK.71/ .91
2
Type number
t for time t
)
Parameters
Max. average on-state
current (Thyristors)
Max. average forward
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
current (Diodes)
AV
2
2
t for fusing
√t for fusing (1)
x
=
I
2
√
t x
√
t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
IRK.71
13.86
12.56
17.11
15.60
138.6
1665
1740
1400
1470
1850
1940
1.59
9.80
8.96
0.82
0.85
3.00
2.90
165
75
peak reverse voltage peak reverse voltage
V
RRM
400
150
250
repetitive
, maximum
1000
1200
1400
1600
400
600
800
=
V
IRK.91
V
18.30
159.1
15.91
14.52
11.25
10.27
20.00
1785
1870
1500
1570
2000
2100
1.58
T(TO)
0.80
0.85
2.40
2.25
210
95
x I
T(AV)
+
V
RSM
non-repetitive
r
KA
t
Units
KA
A/µs
mΩ
x (I
mA
A
V
V
2
2
, maximum
√s
1100
1300
1500
1700
s
T(RMS)
500
700
900
V
)
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% V
t=8.3ms reapplied
t=10ms T
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% V
t=8.3ms reapplied
t=10ms T
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied,T
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
2
180
T
TM
FM
TM
r
Conditions
J
J
J
< 0.5 µs, t
C
= 25
= 25
= 25
= π x I
= π x I
=π x I
= 85
o
conduction, half sine wave,
o
o
o
C, anode supply = 6V, resistive load
C, anode supply = 6V,
o
(3) 16.7% x π x I
C, from 0.67 V
F(AV)
C
T(AV)
peak off-state voltage,
T(AV)
V
DRM
J
J
p
gate open circuit
= 25
= 25
> 6 µs
I
,
(RMS)
I
g
, max. repetitive
o
o
C,
C,
RRM
RRM
= 500mA,
1000
1200
1400
1600
400
600
800
or
V
DRM
Initial T
Initial T
T
T
T
AV
J
J
J
,
= T
= T
= 25°C
half wave,
Sinusoidal
< I < π x I
J
J
J
J
max
max
www.irf.com
= T
= T
J
J
J
max.
max.
AV
= T
125°C
I
(RMS)
I
I
mA
RRM
DRM
15
J
max