IRKT91/08A Vishay, IRKT91/08A Datasheet - Page 3

• Manufacturer Part Number: IRKT91/08A
• Description: SCR DBL 2SCR 800V 95A ADD-A-PAK
• Manufacturer: Vishay

Specifications of IRKT91/08A

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 95A
• Current - On State (it (rms)) (max): 210A
• Current - Non Rep. Surge 50, 60hz (itsm): 1785A, 1870A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKT91/08A; IRKT91/08; IRKT91/08; VS-IRKT91/08A; VS-IRKT91/08A; VSIRKT91/08A; VSIRKT91/08A

Triggering
Blocking
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Thermal and Mechanical Specifications
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
V
I
I
dv/dt Max. critical rate of rise
P
P
I
-V
V
required to trigger
I
V
I
T
T
R
R
T
wt
RRM
DRM
GM
GT
GD
INS
Devices
GM
G(AV)
GT
GD
stg
J
thJC
thCS
IRK.71
IRK.91
GM
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
, V
180
0.06
0.04
DRM
o
to heatsink
busbar
120
0.07
0.05
Sine half wave conduction
o
0.09
0.06
90
IRK.71
IRK.71
IRK.71
o
0.165
3.0
3.0
12
2500 (1 min)
3500 (1 sec)
- 40 to 125
TO-240AA
0.12
0.08
- 40 to 125
60
110 (4)
0.25
270
150
500
o
4.0
2.5
1.7
0.1
80
10
15
6
5
3
IRK.91
IRK.91
IRK.91
0.18
0.12
30
0.135
thJC
3.0
3.0
12
o
when devices operate at different conduction angles than DC)
180
0.04
0.03
o
Units
Units
Units
V/µs
K/W
gr (oz)
mA
mA
Nm
W
°C
mA
A
V
V
V
120
0.08
0.05
Rect. wave conduction
o
Conditions
T
T
T
T
T
T
T
rated V
T
rated V
Conditions
T
50 Hz, circuit to base, all terminals
shorted
T
gate open circuit
Conditions
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
JEDEC
J
J
J
J
J
J
J
J
J
J
0.10
0.06
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
= 125
90
= 125°C
= 125
= 125
o
DRM
DRM
o
o
C,
C,
o
o
C, linear to 0.67 V
C, gate open circuit
Bulletin I27132 rev. I 09/04
applied
applied
0.13
0.08
60
IRK.71, .91 Series
o
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.18
0.12
30
o
DRM
,
Units
°C/W
3