GP1S95J0000F Sharp Microelectronics, GP1S95J0000F Datasheet

SENSR OPTO SLOT 1.6MM TRANS THRU

GP1S95J0000F

Manufacturer Part Number
GP1S95J0000F
Description
SENSR OPTO SLOT 1.6MM TRANS THRU
Manufacturer
Sharp Microelectronics
Type
Unamplifiedr
Datasheet

Specifications of GP1S95J0000F

Sensing Distance
0.063" (1.6mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
35µs, 35µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-1978-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GP1S95J0000F
Manufacturer:
NEC
Quantity:
16 904
GP1S95J0000F
■ Description
output, transmissive photointerrupter, with opposing
emitter and detector in a molding that provides non-
contact sensing. The compact package series is a result
of unique technology combing transfer and injection
molding.
■ Features
1. Transmissive with phototransistor output
2. Highlights :
3. Key Parameters :
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
GP1S95J0000F is a compact-package, phototransistor
This device has a thin emitter and detector molding.
• Compact Size
• Deep Gap (Gap depth : 3.3mm)
• Thin emitter and detector molding
• Gap Width : 1.6mm
• Slit Width (detector side): 0.3mm
• Package : 3.6×3.4×4.7mm
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
1
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. General purpose detection of object presence or
2. Example : printer, lens control for camera
Gap : 1.6mm Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
motion.
Sheet No.: D3-A00701EN
GP1S95J0000F
© SHARP Corporation
Date Jun. 30. 2005

Related parts for GP1S95J0000F

GP1S95J0000F Summary of contents

Page 1

... GP1S95J0000F ■ Description GP1S95J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non- contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has a thin emitter and detector molding. ...

Page 2

... Residual gate shall be lower than the top of package. • The lead may be exposed at the shaded portion. Product mass : approx. 0.08g Plating material : SnCu (Cu : TYP. 2%) (Unit : mm) a-aʼ section (0.3) Slit width Gate position ∗∗ ∗∗ ∗∗ 2 GP1S95J0000F Sheet No.: D3-A00701EN ...

Page 3

... Month of production A.D. Mark Month 2000 0 1 2001 1 2 2002 2 3 2003 3 4 2004 4 5 2005 5 6 2006 6 7 2007 7 8 2008 8 9 2009 9 10 2010 repeats year cycle Rank mark There is no rank indicator. Country of origin Japan Mark GP1S95J0000F Sheet No.: D3-A00701EN ...

Page 4

... I = 20mA 20V CEO 5V 5mA 10mA μ A CE(sat 5V 100 μ GP1S95J0000F MIN. 1mm Soldering area (T MIN. TYP. MAX. 1.2 1.4 − 10 − − 100 − − 50 300 − 0.4 − − 35 100 − Ω 100 − Sheet No.: D3-A00701EN = 25˚ Unit V μ μ μ ...

Page 5

... C) a Fig.4 Collector Current vs. Forward Current 0.96 0.84 0.72 0.6 0.48 0.36 0.24 0.12 2 2.5 3 (V) Fig.6 Relative Collector Current vs. Ambient Temperature 120 T =25°C a 110 100 ( GP1S95J0000F P tot −25 Ambient temperature T (° = =25° Forward current I (mA ...

Page 6

... Fig.8 Collector Dark Current vs. Ambient Temperature Fig.10 Test Circuit for Response Time R D Input 100 1000 (k ) Fig.12 Detecting Position Characteristics (2) 0 Sensor − + 100 Shield distance L I =5.0mA =25° GP1S95J0000F 6 V 20V Ambient temperature Input Output Output Shield 90 80 Sensor I =5.0mA 60 F ...

Page 7

... V-0) Maximum Sensitivity wavelength (nm) wavelength (nm) 930 Maximum light emitting Material wavelength (nm) Gallium arsenide (GaAs) Lead frame Lead frame plating 42Alloy 7 GP1S95J0000F 1.6mm or more Sensitivity Response time (μs) 700 to 1 200 20 I/O Frequency (MHz) 950 0.3 SnCu plating Sheet No.: D3-A00701EN ...

Page 8

... Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). 8 GP1S95J0000F Sheet No.: D3-A00701EN ...

Page 9

... Package specifi cation ● Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-Elastomer Package method MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. 9 GP1S95J0000F Sheet No.: D3-A00701EN ...

Page 10

... SHARP. Express written permission is also required before any use of this publication may be made by a third party. · Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 10 GP1S95J0000F Sheet No.: D3-A00701EN ...

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