RPI-0125 Rohm Semiconductor, RPI-0125 Datasheet
RPI-0125
Manufacturer Part Number
RPI-0125
Description
SENSOR OPTO SLOT 1.2MM TRANS SMD
Manufacturer
Rohm Semiconductor
Type
Unamplifiedr
Datasheet
1.RPI-0125.pdf
(2 pages)
Specifications of RPI-0125
Sensing Distance
0.047" (1.2mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
10µs, 10µs
Mounting Type
Surface Mount
Package / Case
4-SMD
Operating Temperature
-25°C ~ 85°C
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Maximum Collector Current (detector)
30 mA
Slot Width
1.2 mm
Output Device
Phototransistor
Power Dissipation
80 mW
Maximum Fall Time
10000 ns (Typ)
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
10000 ns (Typ)
Minimum Operating Temperature
- 25 C
Wavelength
950 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1629-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RPI-0125
Manufacturer:
ROHM Semiconductor
Quantity:
103
Company:
Part Number:
RPI-0125
Manufacturer:
FUJISOKU
Quantity:
73
RPI-0125
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
A
B
125
100
125
100
Parameter
75
50
25
75
50
25
Parameter
0
0
Fig.1 Relative output current vs.
0
0
Fig.4 Relative output current vs.
0.5
distance ( )
0.5
distance ( )
Photointerrupter, Ultraminiature SMD type
DISTANCE : d
DISTANCE : d
1.0
Rise time
Fall time
1.5
1.0
(mm)
(mm)
2.0
Symbol
1.5
V
V
Topr
Tstg
V
P
P
I
CEO
ECO
I
F
C
R
D
C
2.5
Symbol
d
V
I
tr tf
CE(sat)
V
CEO
λ
λ
λ
I
I
tr
tf
I
f
R
C
C
C
F
P
P
P
3.0
2.0
−25 to +85
−30 to +85
0.45
0.45
0.95
Min.
Limits
−
−
−
−
−
−
−
−
−
−
−
4.5
50
80
30
30
80
5
Typ.
800
950
800
1.3
10
10
10
−
−
−
−
−
−
1
Fig.5 Power dissipation / collector power
120
100
50
40
30
20
10
80
60
40
20
0
0
Max.
4.95
2.33
4.95
1.6
10
0.5
0.4
−
−
−
−
−
−
−
−20
dissipation vs. ambient temperature
−20
Unit
mW
mW
mA
mA
°C
°C
AMBIENT TEMPERATURE : Ta (°C)
Fig.2 Forward current falloff
V
V
V
AMBIENT TEMPERATURE : Ta (°C)
P
Unit
MHz
nm
mA
mA
nm
nm
D
µA
µA
µs
µs
µs
0
0
V
V
P
C
20
20
I
V
V
V
I
V
V
I
∗ Non-coherent Infrared light emitting diode used.
V
∗ This product is not designed to be protected against electromagnetic wave.
F
F
F
= 50mA
R
CE
CE
= 20mA, I
CC
CE
= 50mA
CC
= 5V
= 10V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
40
40
F
F
F
C
= 20mA
= 20mA
C
= 20mA, R
= 1mA, R
= 0.1mA
60
60
80
80
L
= 100Ω
L
= 100Ω
100
100
Conditions
−
−
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
1) Ultra-small.
2) Gap 1.2mm.
Applications
Features
100
50
40
30
20
10
80
60
40
20
0
0
0.2
Fig.3 Forward current vs. forward
Fig.6 Relative output vs. ambient
−25
0.4
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
temperature
voltage
0.6
0
0.8
25
1.0
1.2
50
1.4
F
(
V
I
75
V)
F
CE
=20mA
−25°C
1.6
25°C
50°C
75°C
=5V
0°C
1.8
100
5
4
3
2
1
0
7
6
5
4
3
2
1
0
COLLECTOR TO EMITTER VOLTAGE: V
0
0
External dimensions (Unit : mm)
Fig.10 Output characteristics
Fig.7 Collector current vs.
FORWARD CURRENT : I
5
2
forward current
( 2 - 0 . 1 )
10
4
( 4 - 0 . 3 )
15
6
2 - R 0 . 3
F
I
1 . 0
F
(mA)
=30mA
20
8
25mA
20mA
15mA
10mA
Gap
3 . 6 ± 0 . 3
5mA
1 . 2 ± 0 . 3
( 2 . 9 0 )
( 1 . 2 8 )
CE
1 . 6
(V)
25
10
C 0 . 2
A
A
( 4 - 0 . 3 5 )
Fig.11 Response time measurement circuit
100
10
t
t
t
0.05 0.1
1
d
r
f
:
:
:
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
Input
Optical axis center
COLLECTOR CURRENT : I
Fig.8 Response time vs.
V
collector current
CC
Cross-section A-A
R
L
Output
Input
Output
C 0 . 4
1
t
d
Emitter
Collector
Recommended Pad Layout
R
R
R
L
L
L
=1kΩ
=500Ω
=100Ω
t
C
r
(mA)
2 . 6
0 . 3
10
Cathode
Anode
t
f
90%
10%
Notes:
1.
2. Dimension in parenthesis are
shall be ±0.2 .
show for reference.
Unspecified tolerance
1000
100
0.1
10
1
0 . 8 5
−25
AMBIENT TEMPERATURE : Ta
3 . 2
Fig.9 Dark current vs.
ambient temperature
0
25
50
V
V
V
CE
CE
CE
=30V
=20V
=10V
75
(
°C
)
100
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RPI-0125 Summary of contents
Page 1
... RPI-0125 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Forward current Reverse voltage Power dissipation Collector-emitter voltage CEO Emitter-collector voltage V 4.5 V ECO Collector current Collector power dissipation −25 to +85 °C Operating temperature Topr −30 to +85 °C ...
Page 2
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...