GP1S097HCZ Sharp Microelectronics, GP1S097HCZ Datasheet - Page 2

• Manufacturer Part Number: GP1S097HCZ
• Description: PHOTOINTERRUPTER SLOT 2.0MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S097HCZ

• Sensing Distance: 0.079" (2mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1042-5

Fig.1 Forward Current vs. Ambient
Fig.3 Forward Current vs. Forward Voltage
Input
Output
Transfer
characte-
ristics
Electro-optical Characteristics
Temperature
Collector dark current
Collector-emitter saturation voltage
Response time
Forward voltage
Reverse current
Collector current
100
10
60
50
40
30
20
10
Parameter
0
1
0
25
0.3
75 C
0.6
0
Ambient temperature T
50 C
25 C
Rise time
Fall time
Forward voltage V
0.9
1.2
25
1.5
Symbol
V
I
CE(sat)
V
1.8
CEO
50
I
I
t
t
0 C
R
C
r
f
F
F
25 C
(V)
2.1
a
( C)
75 85
2.4
2.7
100
3
V
I
F
V
CE
CE
10mA, I
R
Conditions
I
V
5V, I
L
F
V
5V, I
CE
1 000
R
20mA
20V
C
3V
F
C
100 A
5mA
Fig.2 Power Dissipation vs. Ambient
Fig.4 Collector Current vs. Forward Current
40 A
Temperature
120
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0
25
0
V
T
P, P
P
2
a
CE
tot
25 C
c
MIN.
100
5V
0
4
Ambient temperature T
Forward current I
6
25
8
TYP.
1.2
50
50
10
50
12
F
(mA)
a
14
( C)
MAX.
400
150
150
100
1.4
0.4
10
75 85
16
18 20
(Ta 25 C)
100
Unit
nA
V
V
A
A
s
s