GP1S39 Sharp Microelectronics, GP1S39 Datasheet

PHOTOINTERRUPTER SLOT 1.5MM PCB

GP1S39

Manufacturer Part Number
GP1S39
Description
PHOTOINTERRUPTER SLOT 1.5MM PCB
Manufacturer
Sharp Microelectronics
Type
Unamplifiedr
Datasheet

Specifications of GP1S39

Sensing Distance
0.059" (1.5mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
50µs, 50µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
425-1046-5

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GP1S39
1. Ultra-compact package
2. PWB mounting type
3. Double-phase phototransistor output type
4. Wide gap between light emitter and
5. Slit width: 0.8mm
6. Detecting pitch: 0.6mm
1. Mouses
2. Cameras
*1 For 5 seconds
Input
Output
for detecting of rotation direction and count
Features
detector: 1.5mm
Applications
Absolute Maximum Ratings
*1
Collector power dissipation
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameter
V
V
V
V
Symbol
T
T
T
P
V
E 1 CO
E 2 CO
P
I
I
CE 1 O
CE 2 O
P
opr
stg
sol
F
C
tot
C
R
- 25 to + 85
- 40 to + 100
Rating
100
260
( Ta = 25˚C )
50
75
35
20
75
6
6
Unit
mW
mW
mW
mA
mA
˚C
˚C
˚C
V
V
V
Subminiature, Double-phase
Output, Wide Gap
Photointerrupter
Center of light path
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by
* Internal elements are appeared because of thin external mold
Outline Dimensions
to those measured from the lead base.
resin marked
4
1.5
5
3
B
B'
3.14
4.5
1.5
A'
A
0.15
1.5
( C0.3 )
1
2
+ 0.2
- 0.1
Internal connection diagram
Soldering area
1
2
( 0.37 )
B-B' section
Rest of gate
refer
( 1.0 )
( 2 )
( C0.4 )
PT2
PT1
( 0.37 )
0.4
1.27
5
4
3
( Unit : mm )
4.0
A-A' section
Slit width of
emitter side
1 Anode
2 Cathode
3 Emitter2
4 Emitter1
5 Collector
GP1S39
( 0.8 )
1.27

Related parts for GP1S39

GP1S39 Summary of contents

Page 1

... Unit : mm ) Internal connection diagram PT1 PT2 2 3 4.5 4.0 ( C0.4 ) 1.5 1 Rest of gate ( 0.2 0.4 0.15 - 0.1 1.27 3. B-B' section ( refer Soldering area GP1S39 1 Anode 2 Cathode 3 Emitter2 4 Emitter1 5 Collector 1.27 A-A' section Slit width of emitter side ( 0.8 ) ...

Page 2

... V ) MIN. TYP 4mA 130 - F = 4mA 0. 100 Ambient Temperature 120 P tot 100 ˚C ) Ambient temperature T a Forward Current 1 25˚C a 0.8 0.6 0.4 0 Forward current I F GP1S39 ( Ta = 25˚C ) MAX. Unit 1 100 nA 520 A 1.5 - 0.4 V 150 s 150 s 85 100 10 ...

Page 3

... F 40mA 30mA 20mA 10mA 4mA Fig. 8 Collector Dark Current vs ˚ Test Circuit for Response Time Input Ambient Temperature 400 =4mA F 300 200 100 - ˚C ) Ambient temperature T a Ambient Temperature - 20V ˚C ) Ambient temperature T a Input Output Output GP1S39 = 100 10% 90 ...

Page 4

... Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) 100 Shield distance Please refer to the chapter “Precautions for Use”. Fig.11 Relative Collector Current vs Shield I = 4mA 25˚ Shield Distance ( 2 ) Shield 100 0.5 1 1.5 Shield distance GP1S39 4mA = 25˚ ...

Page 5

Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any ...

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