EE-SY169 Omron, EE-SY169 Datasheet

SENSR OPTO TRANS 4MM REFL TH PCB

EE-SY169

Manufacturer Part Number
EE-SY169
Description
SENSR OPTO TRANS 4MM REFL TH PCB
Manufacturer
Omron
Type
Infraredr
Datasheets

Specifications of EE-SY169

Sensing Distance
0.157" (4mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
40mA
Output Type
Phototransistor
Response Time
30µs, 30µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
0°C ~ 70°C
Output Configuration
Phototransistor
Termination Style
PCB
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
20mA
Output Voltage
30V
Opto Case Style
Through Hole
No. Of Pins
4
Input Current Max
20mA
Output Voltage Max
5V
Current, Switching
20 mA
Function
Proximity
Indicator
LED
Light Source
Infrared LED
Material, Body
ABS
Material, Lens
Plastic
Output
NPN
Primary Type
Photoelectric
Sensing Mode
Reflective
Standards
UL Listed
Technology
Photoelectric
Temperature, Operating
0 to +70 °C
Termination
Solder
Voltage, Supply
2.3 V
Voltage, Switching
30 V
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Leaded Process Compatible
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
EESY169
OR581

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EE-SY169
Manufacturer:
Omron Electronics
Quantity:
135
Part Number:
EE-SY169
Manufacturer:
OMRON
Quantity:
1
Part Number:
EE-SY169A
Manufacturer:
OMRON
Quantity:
1
Part Number:
EE-SY169B
Manufacturer:
OMRON
Quantity:
1
Part Number:
EE-SY169B
Manufacturer:
OMRON/欧姆龙
Quantity:
20 000
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25° C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
A
K
Emitter
Detector
Rising time
Falling time
A
K
C
E
Terminal No.
Photomicrosensor (Reflective)
EE-SY169
Internal Circuit
Surface A
Anode
Cathode
Collector
Emitter
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Forward voltage
Name
C
E
Item
Note: These dimensions are for
Unless otherwise specified, the
tolerances are as shown below.
(see note)
3 mm max.
3
6
10
18
<
<
Dimensions
(see note)
<
<
mm
mm
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
mm
mm
1±0.1 dia.
6
10
18
30
1±0.1 dia.
Two, C0.2
Tolerance
±
±
±
±
±
0.3
0.375
0.45
0.55
0.65
V
I
λ
I
I
I
V
λ
tr
tf
R
L
D
LEAK
P
P
F
CE
Symbol
(sat)
1.85 V typ., 2.3 V max.
0.01 µA typ., 10 µA max.
660 nm typ.
160 µA min., 2,000 µA max.
2 nA typ., 200 nA max.
2 µA max.
---
850 nm typ.
30 µs typ.
30 µs typ.
Photomicrosensor (Reflective)
■ Features
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizon-
• With a red LED sensing dyestuff-type inks.
• Limited reflective model.
• For lesser LED forward current, use EE-SY169B.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
■ Ordering Information
Emitter
Detector
Ambient
temperature
Soldering temperature
Photomicrosensor (reflective)
tally and vertically.
Value
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
ature exceeds 25° C.
Description
Item
Forward current
Pulse forward
current
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Operating
Storage
I
V
I
I
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
V
I
---
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 20 mA
= 20 mA
= 20 mA, V
= 20 mA, V
= 3 V
= 5 V, 0 lx
= 5 V
= 5 V, R
= 5 V, R
EE-SY169
I
I
V
V
V
I
P
Topr
Tstg
Tsol
Symbol
F
FP
C
L
L
R
CEO
ECO
C
CE
CE
= 1 kΩ, I
= 1 kΩ, I
EE-SY169
Condition
= 5 V
= 5 V with no reflection
40 mA (see note 1)
300 mA
(see note 2)
3 V
30 V
---
20 mA
100 mW
(see note 1)
0° C to 70° C
–20° C to 80° C
260° C (see note 3)
L
L
= 1 mA
= 1 mA
Rated value
Model
1

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