NTNUS3171PZT5G ON Semiconductor, NTNUS3171PZT5G Datasheet

NTNUS3171PZT5G

Manufacturer Part Number

NTNUS3171PZT5G

Description

MOSFET P-CH 20V 200MA SOT-1123

Manufacturer

ON Semiconductor

Datasheet

1.NTNUS3171PZT5G.pdf (5 pages)

Specifications of NTNUS3171PZT5G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.5 Ohm @ 100mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

150mA

Vgs(th) (max) @ Id

1V @ 250µA

Input Capacitance (ciss) @ Vds

13pF @ 15V

Power - Max

125mW

Mounting Type

Surface Mount

Package / Case

SOT-1123

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

7 mOhms

Forward Transconductance Gfs (max / Min)

0.26 s

Drain-source Breakdown Voltage

- 20 V

Continuous Drain Current

- 150 A

Power Dissipation

- 125 mW, - 200 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTNUS3171PZT5G

Manufacturer:

ON Semiconductor

Quantity:

2 900

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTNUS3171PZT5G

Manufacturer:

ON/安森美

Quantity:

20 000

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NTNUS3171PZ

Small Signal MOSFET

−20 V, −200 mA, Single P−Channel,

1.0 x 0.6 mm SOT−1123 Package

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using the minimum recommended pad size,

2. Pulse Test: pulse width v300 ms, duty cycle v2%

October, 2010 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 2)

Lead Temperature for Soldering Purposes

Package

Thin Environments such as Portable Electronics.

Single P−Channel MOSFET

Offers a Low R

1.5 V Gate Voltage Rating

Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

This is a Pb−Free Device

High Side Switch

High Speed Interfacing

Optimized for Power Management in Ultra Portable Equipment

or 2 mm

(Note 1)

(1/8” from case for 10 s)

, 1 oz Cu.

Parameter

DS(on)

Solution in the Ultra Small 1.0 x 0.6 mm

Steady

t v 5 s

Steady

t v 5 s

State

= 25°C unless otherwise specified)

= 10 ms

= 25°C

= 85°C

= 25°C

Symbol

STG

DSS

−55 to

Value

−150

−110

−200

−125

−200

−600

−200

−20

150

260

±8

Unit

°C

†For information on tape and reel specifications,

NTNUS3171PZT5G SOT−1123

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 524AA

(BR)DSS

−20 V

SOT−1123

Device

ORDERING INFORMATION

http://onsemi.com

3.5 W @ −4.5 V

4.0 W @ −2.5 V

5.5 W @ −1.8 V

7.0 W @ −1.5 V

= Specific Device Code

(Rotated 90° Clockwise)

= Date Code

DS(ON)

P−Channel

MOSFET

(Pb−Free)

Package

Publication Order Number:

MAX

8000/Tape & Reel

NTNUS3171PZ/D

MARKING

DIAGRAM

Shipping

5 M

−0.20 A

Max

†

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NTNUS3171PZT5G Summary of contents

Page 1

... MOSFET ORDERING INFORMATION Device Package Shipping NTNUS3171PZT5G SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTNUS3171PZ/D Max † ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – (Note 3) 3. Surface−mounted on FR4 board using the minimum recommended pad size ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown ...

Page 3

V 2 2.2 thru 2 0.28 0.24 0.20 0.16 0.12 0.08 0. DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 9 200 mA ...

Page 4

C iss oss rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation V 0. 25°C J 0.10 0.08 0.06 ...

Page 5

... H E *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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