SIR-56ST3F Rohm Semiconductor, SIR-56ST3F Datasheet

Infrared Emitters IR LED FOR REMOTE CONTROLLER

SIR-56ST3F

Manufacturer Part Number
SIR-56ST3F
Description
Infrared Emitters IR LED FOR REMOTE CONTROLLER
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SIR-56ST3F

Beam Angle
+/- 15 deg
Radiant Intensity
5.6 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
160 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Forward Voltage
1.3 V
Lens Shape
Dome
Operating Voltage
1.3 V
Wavelength
950 nm
Package / Case
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR-56ST3F
Manufacturer:
ROHM
Quantity:
11 240
Part Number:
SIR-56ST3F(950NM)
Manufacturer:
ROHM
Quantity:
200 000
Sensors
Infrared light emitting diode, top view type
SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household
remote control devices.
Optical control equipment
Light source for remote control devices
1) High efficiency, high output P
2) Emission spectrum well suited to silicon detectors.
3) Good current-optical output linearity.
4) Long life, high reliability.
∗ Pulse width=0.1msec, duty ratio 1%
Features
Applications
Absolute maximum ratings (Ta = 25°C)
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Parameter
O
=8.0mW (I
F
Symbol
=50mA).
Topr
Tstg
I
V
P
FP
I
F
R
D
−25 to +85
−40 to +85
Limits
100
160
0.5
5
Dimensions (Unit : mm)
2− 0.5
2−0.6
Unit
mW
mA
°C
°C
φ5.0±0.2
V
A
1
(2.5)
2
Notes:
1.
2. Dimension in parenthesis are
1
shall be ±0.2.
show for reference.
Unspecified tolerance
Anode
SIR-56ST3F
Rev.A
2
Cathode
1/3

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SIR-56ST3F Summary of contents

Page 1

... Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices ...

Page 2

... FORWARD VOLTAGE : V (V) F Fig.2 Forward current vs. forward voltage 200 100 − 100 AMBIENT TEMPERATURE : Ta (°C) Fig.5 Relative emitting strength vs. ambient temperature SIR-56ST3F Conditions =50mA I F =50mA I F =100mA =50mA I F =50mA I F =50mA I F =50mA I F =50mA ...

Page 3

... Sensors 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 100 10° 20° 30° 40° 50° 60° 70° 80° 90° AMGULAR DISPLACEMENT : θ (deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern 100 SIR-56ST3F Rev.A 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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