SIR-563ST3F Rohm Semiconductor, SIR-563ST3F Datasheet

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SIR-563ST3F

Manufacturer Part Number
SIR-563ST3F
Description
Infrared Emitters IR LED HIGH OUTPUT
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of SIR-563ST3F

Beam Angle
15 deg
Maximum Power Dissipation
160 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Forward Current
100 mA
Forward Voltage
1.34 V
Mounting Style
Through Hole
Wavelength
940 nm
Package / Case
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Sensors
Infrared light emitting diode, top view type
SIR-563ST3F
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
compact optical control equipment.
Optical control equipment
Light source for remote control devices
1) High efficiency, high output P
2) Wide radiation angle θ1/2=15deg.
3) Emission spectrum well suited to silicon detectors.
4) Good current-optical output linearity.
5) Long life, high reliability.
∗ Pulse width=0.1msec, duty ratio 1%
Features
Applications
Absolute maximum ratings (Ta = 25°C)
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
(λP=940nm).
Parameter
O
=11.0mW (I
Symbol
F
Topr
=50mA).
Tstg
I
V
P
FP
I
F
R
D
−25 to +85
−40 to +85
Limits
100
160
5.0
0.5
Dimensions (Unit : mm)
2− 0.5
4−0.6
Unit
mW
mA
°C
°C
V
A
1
φ5.0±0.2
(2.5)
2
Notes:
1.
2. Dimension in parenthesis are
1
shall be ±0.2.
show for reference.
Unspecified tolerance
Anode
SIR-563ST3F
Rev.A
2
Cathode
1/3

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SIR-563ST3F Summary of contents

Page 1

... Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment. ...

Page 2

... FORWARD VOLTAGE : V (V) F Fig.2 Forward current vs. forward voltage 200 100 − AMBIENT TEMPERATURE : Ta (°C) Fig.5 Relative emitting strength vs. ambient temperature SIR-563ST3F Conditions =50mA I F =50mA I F =50mA =50mA I F =50mA I F =50mA I F =50mA I F =50mA I ...

Page 3

... Sensors 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 100 ANGULAR DISPLACEMENT : θ (deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern 100 10° 20° 30° 40° 50° 60° 70° 80° 90° SIR-563ST3F Rev.A 3/3 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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