NTE3040 NTE ELECTRONICS, NTE3040 Datasheet
NTE3040
Manufacturer Part Number
NTE3040
Description
Replacement Optoelectronics DIP-6 NPN PHOTO TRAN
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE3040.pdf
(2 pages)
Specifications of NTE3040
Optocoupler Output Type
Transistor
No. Of Pins
6
C-e Breakdown Voltage
30V
Mounting Type
Through Hole
Dc Collector Current
0.1A
Dc Current Gain Min (hfe)
1
Isolation Voltage
1500Vrms
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6−Lead DIP type package coupled
with a silicon phototransistor.
Applications:
D Power Supply Regulators
D Digital Logic Inputs
D Microprocessor Inputs
Absolute Maximum Ratings: (T
Infrared Emitting Diode
Power Dissipation, P
Forward Current, I
Reverse Voltage, V
Phototransistor
Power Dissipation, P
Collector−to−Emitter Voltage, V
Collector−to−Base Voltage, V
Emitter−to−Collector Voltage, V
Total Device
Power Dissipation, P
Storage Temperature, T
Operating Temperature, T
Lead Soldering Temperature (10 seconds)
Electrical Characteristics: (T
Note 1. Typical values at T
Infrared Emitting Diode
Input Forward Voltage
Reverse Leakage Current
Derate above 25°C ambient
Continuous
Peak (Pulse Width 1μsec, 300pps)
Derate above 25°C ambient
Derate above 25°C ambient
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
D
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25°C.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
A
CEO
ECO
= +25°C, Note 1, unless otherwise specified)
NPN Transistor Output
A
= +25°C, unless otherwise specified)
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Symbol
Optoisolator
V
I
R
F
NTE3040
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
F
R
= 10mA
= 6V
Test Conditions
Min
−
−
0.001
1.18
Typ
−55° to +150°C
−55° to +100°C
Max Unit
1.50
10
2.0mW/°C
2.0mW/°C
3.3mW/°C
150mW
150mW
250mW
+260°C
100mA
μA
V
30V
70V
3A
6V
7V
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NTE3040 Summary of contents
Page 1
... Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6−Lead DIP type package coupled with a silicon phototransistor. Applications: D Power Supply Regulators D Digital Logic Inputs D Microprocessor Inputs Absolute Maximum Ratings: (T Infrared Emitting Diode Power Dissipation Derate above 25°C ambient Forward Current, I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Phototransistor Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Collector Breakdown Voltage Collector−Emitter Dark Current Collector−Base Dark Current Capacitance Isolation Characteristics Input−Output Isolation Voltage RMS Peak Isolation Resistance Isolation Capacitance Transfer Characteristics DC Current Transfer Ratio Collector−Emitter ...