FP31QF-PCB1900 TriQuint, FP31QF-PCB1900 Datasheet - Page 10

• Manufacturer Part Number: FP31QF-PCB1900
• Description: WiFi / 802.11 Modules & Development Tools 1900MHz Eval Brd 13.5dB Gain
• Manufacturer: TriQuint

Specifications of FP31QF-PCB1900

• Wireless Frequency: 1.9 GHz
• Operating Voltage: 9 VDC
• Output Power: 7.5 W
• Operating Temperature Range: - 40 C to + 85 C
• For Use With/related Products: FP31QF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1067267

The 3.5 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain any FP31QF evaluation board and modify it with the circuit shown to
achieve the performance shown in this reference design.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
Circuit Board Material: .014” FR-4 (ε
The main microstrip line has a line impedance of 50 Ω.
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
Drain Bias = +9 V, I
(+18 dBm / tone, 1 MHz spacing)
FP31QF
2-Watt HFET
ID=C1
C=22 pF
Typical RF Performance
C2
ID=L3
L=3.3 nH
r
= 4.6),
ds
= 450 mA, 25 °C
The application circuit is matched for output power.
MHz
C3
dBm
dBm
TLIN
Z0=50 Ohm
EL=55 Deg
F0=3.5 GHz
dB
dB
dB
Reference Design: 3500 MHz
+33.5
3500
11.9
-8.8
+45
-16
ID=R1
R=2.2 Ohm
ID=C8
C=22 pF
ID=C2
C=0.9 pF
ID=C7
C=1000 pF
TLIN
Z0=50 Ohm
EL=5.9 Deg
F0=3.5 GHz
• Both the C2 and C3 placements are between the first and second via locations
• The via hole spacing along the main microstrip line is .040”.
• The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
• The transmission line lengths shown in the schematic are from the FP31QF
ID=L1
L=6.8 nH
-10
-15
-20
-25
Ref. Desig.
C1, C4, C8, C10
C2
C3
C7, C11
C12
L1, L2
L3
R1
R2
Q1
C5, C6
Bill of Materials
along the main microstrip line leading from the FP31QF device. Further
descriptions are shown in the diagram on the left.
device edge to the component edge.
15
10
-5
5
0
3.3
1
ID=R2
R=51 Ohm
NET="FP31QF"
3.35
-Vgg
DB(|S[1,1]|)
2
Vds=9V @ 450 mA
Specifications and information are subject to change without notice
Value
22 pF
0.9 pF
1.0 pF
1000 pF
0.1 μF
6.8 nH
3.3 nH
2.2 Ω
50 Ω
FP31QF
3.4
Measured S-Parameters
3.45
ID=L2
L=6.8 nH
DB(|S[2,1]|)
TLIN
Z0=50 Ohm
EL=12.8 Deg
F0=3.5 GHz
Frequency (GHz)
ID=C12
C=1e4 pF
ID=C11
C=1000 pF
ID=C10
C=22 pF
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 2W HFET
Do Not Place
3.5
3.55
DB(|S[2,2]|)
ID=C3
C=1 pF
ID=C4
C=22 pF
Page 10 of 12 March 2008
3.6
QFN 6x6
Size
0603
0603
0603
0603
1206
0805
0603
0603
0603
3.65
3.7