TGA2509 TriQuint, TGA2509 Datasheet
TGA2509
Specifications of TGA2509
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TGA2509 Summary of contents
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... The TGA2509 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,decoys, jammers and phased array systems. The TGA2509 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Key Features • ...
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... These ratings apply to each individual FET. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS 1/ VALUE 12 < –V < 14V c 1 dBm 17.5 W 15.7 W 200 °C 320 °C -65 to 150 ° May 2009 © Rev - TGA2509 NOTES 2/, 3/ 2 ...
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... Output Power @ P 1dB Gain 1dB Compression TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE °C, Nominal 1.1 A TEST CONDITION f = 2-22 GHz f = 2-22 GHz f = 2-22 GHz f = 2-16 GHz f = 2-20 GHz f = 2-20 GHz May 2009 © Rev - TGA2509 NOMINAL UNITS 28.5 dBm 3 ...
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... Power dissipated and the temperature rise in the channel is 90 °C. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE III THERMAL INFORMATION 155 158 May 2009 © Rev - TGA2509 θ (HRS) (°C/W) 6.4 6.7E+5 8.3 5.2E+5 4 ...
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... Measured Fixtured Data Bias Conditions: Vd =12 V, Id= 1.1 A TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGA2509 5 ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Characteristics (RF In) 0.100 x 0.150 (0.004 x 0.006) (Vg1) 0.100 x 0.100 (0.004 x 0.004) (RF Out) 0.100 x 0.150 (0.004 x 0.006) (Vd) 0.250 x 0.100 (0.010 x 0.004) (Vg2) 0.100 x 0.100 (0.004 x 0.004) (VC) 0.100 x 0.100 (0.004 x 0.004) May 2009 © Rev - TGA2509 0.482 (0.019 ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Recommended Assembly Diagram Vg1 May 2009 © Rev - TGA2509 100pF RF OUT 100pF 100pF 100pF Vg2 7 ...
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... Devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes May 2009 © Rev - TGA2509 8 ...