TGA2514 TriQuint, TGA2514 Datasheet - Page 9

• Manufacturer Part Number: TGA2514
• Description: RF Amplifier Ku-Band 6.5W HPA
• Manufacturer: TriQuint
• Type: Power Amplifierr

Specifications of TGA2514

• Operating Frequency: 13 GHz to 18 GHz
• P1db: 38 dBm
• Operating Supply Voltage: 9 V
• Supply Current: 4 A
• Maximum Power Dissipation: 20.8 W
• Package / Case: 2.87 mm x 3.9 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1023934

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Email: [e-mail] Web: www.triquint.com
Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
Interconnect process assembly notes:
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Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200°C.
(for 30 sec max).
Assembly Process Notes
Product Data Sheet
August 5, 2008
TGA2514
9