TGA4517 TriQuint, TGA4517 Datasheet

RF Amplifier 31-37 GHz 3.5W HPA

TGA4517

Manufacturer Part Number
TGA4517
Description
RF Amplifier 31-37 GHz 3.5W HPA
Manufacturer
TriQuint
Type
Power Amplifierr
Datasheet

Specifications of TGA4517

Operating Frequency
31 GHz to 37 GHz
P1db
35 dBm
Operating Supply Voltage
6.5 V
Supply Current
4 A
Maximum Power Dissipation
26 W
Package / Case
4.35 mm x 3.9 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1023533

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGA4517
Manufacturer:
Triquint
Quantity:
1 400
Product Description
The TriQuint TGA4517 is a compact High
Power Amplifier MMIC for Ka-band
applications. The part is designed using
TriQuint’s 0.15um gate power pHEMT process.
The TGA4517 nominally provides 35dBm of
Saturated Output Power, and 20dB small
signal gain @ mid-band of 31 - 37GHz. The
MMIC also provides 12dB Return Loss.
The part is ideally suited for markets such as
Point-to-Point Radio, Military Radar Systems,
and Ka-Band Satellite Communications both
commercial and military.
The TGA4517 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Datasheet subject to change without notice
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Ka Band Power Amplifier
May 2009 © Rev -
Key Features
Primary Applications
-10
-15
-20
-25
38
36
34
32
30
28
26
25
20
15
10
Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20%
-5
5
0
32
30 31 32 33 34 35 36 37 38 39 40
Frequency Range: 31 - 37 GHz
35 dBm Nominal Psat @ Mid-band
20 dB Nominal Gain @ Mid-band
12 dB Nominal Return Loss
Bias 5-6 V, 2 A Quiescent
0.15 um 3MI pHEMT Technology
Chip Dimensions 4.35 x 3.90 x 0.05 mm
Point-to-Point Radio
Military Radar Systems
Ka-Band Sat-Com
Bias Conditions: Vd = 6 V, Idq = 2 A
Measured Fixtured Data
33
GAIN
@ Pin = 24 dBm
Frequency (GHz)
34
Frequency (GHz)
(0.171 x 0.154 x 0.002) in
IRL
35
TGA4517
36
ORL
37
1
38

Related parts for TGA4517

TGA4517 Summary of contents

Page 1

... The part is ideally suited for markets such as Point-to-Point Radio, Military Radar Systems, and Ka-Band Satellite Communications both commercial and military. The TGA4517 is 100% DC and RF tested on- wafer to ensure performance compliance. Lead-Free & RoHS compliant. Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Key Features • ...

Page 2

... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I ABSOLUTE MAXIMUM RATINGS -65 to 150 °C TABLE II DC PROBE TESTS ( Nominal) ° MIN. TYP. -30 -14 -30 -14 -1.5 May 2009 © Rev - TGA4517 VALUE NOTES 6 141 mA 3/ TBD 200 ° 320 °C MAX. UNITS -11 ...

Page 3

... Drain Current (Quiescent), Idq Gate Voltage, Vg Small Signal Gain, S21 @ Mid-band Input Return Loss, S11 Output Return Loss, S22 Output Power, Psat TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE III ( Nominal) TYPICAL May 2009 © Rev - TGA4517 UNITS GHz -0 ...

Page 4

... C baseplate temperature. Worst case condition with no RF applied, 100 power is dissipated. Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE IV THERMAL INFORMATION T TEST CH (°C) CONDITIONS Idq = 2 A 122.3 Pdiss = 12 W May 2009 © Rev - TGA4517 θ (HRS) (°C/W) 4.36 1.2E+7 4 ...

Page 5

... Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp Bias Conditions: Vd =5-6 V, Idq = 2 A, Duty = 20%, Room Temp TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA4517 Vd=5V Vd= Vd=5V Vd= ...

Page 6

... Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp -10 -15 -20 - -10 -15 -20 - TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA4517 Vd=5V Vd= Vd=5V Vd= ...

Page 7

... Drain Current vs. Drain Voltage, Duty = 20%, Room Temp. 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Pin = 24 dBm 35 36 Frequency (GHz) Frequency = 35 GHz Input Power (dBm) May 2009 © Rev - TGA4517 Vd=5V Vd= Vd=5V Vd= ...

Page 8

... Bias Conditions: Vd =5-6 V, Idq = Power @ Pin = 22dBm, Room Temp TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data 35 36 Frequency (GHz) May 2009 © Rev - TGA4517 Vd=5V Vd= ...

Page 9

... Out) May 2009 © Rev - TGA4517 4.226 3.821 2.860 (0.166) (0.150) (0.113 4.352 3 ...

Page 10

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Chip Assembly Diagram 0.01uF 0.01uF 1000pF 1000pF 1000pF 1000pF 0.01uF 10uF 100 Ohm . Vg May 2009 © Rev - TGA4517 Vd 0.01uF 1000pF RF Out 1000pF 0.01uF Vd 10 ...

Page 11

... Maximum stage temperature is 200 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes 0 C. May 2009 © Rev - TGA4517 0 C (30 seconds max). 11 ...

Related keywords