1N4148WS-V-GS08 Vishay, 1N4148WS-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: 1N4148WS-V-GS08
• Description: Diodes (General Purpose, Power, Switching) 100 Volt 350mA
• Manufacturer: Vishay

Specifications of 1N4148WS-V-GS08

• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 0.35 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323
• Diode Type: Switching
• Forward Current If(av): 150mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 350mA
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.15
• Rev Curr: 100uA
• Peak Non-repetitive Surge Current (max): 0.35A
• Forward Voltage: 1.2@0.1AV
• Operating Temp Range: -65C to 150C
• Package Type: SOD-323
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T
Note:
1)
Electrical Characteristics
T
Rectification Efficiency Measurement Circuit
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
amb
amb
Valid provided that electrodes are kept at ambient temperature.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
17436
60 Ω
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
I
F
t
p
= 10 mA, I
Tested with 50 mA pulses,
= 0.1 µs, rise time < 30 ns,
f = 100 MHz, V
V
R
f
p
= 20 V, T
Test condition
V
= (5 to 100) kHz
I
V
R
F
I
F
V
V
F
R
V
L
= 100 mA
= V
R
R
R
= 10 mA
RF
= 100 Ω
= 100 V
Test condition
= 1 mA, V
= 20 V
= 75 V
= 2 V
R
j
= 0 V
= 150 °C
RF
= 2 V
R
= 6 V,
Symbol
C
V
V
V
ην
I
I
I
I
t
R
R
R
R
rr
F
F
D
fr
Symbol
R
T
thJA
T
stg
j
2 nF
[e-mail]
Min.
0.45
5 kΩ
- 65 to + 150
Value
650
150
Typ.
1)
Document Number 85751
Max.
1000
1200
V
100
2.5
25
50
O
5
4
4
Rev. 1.8, 12-Aug-10
K/W
Unit
°C
°C
Unit
mV
mV
nA
µA
µA
µA
pF
ns
V