2N5060 Central Semiconductor, 2N5060 Datasheet - Page 2

• Manufacturer Part Number: 2N5060
• Description: SCRs 0.8A 30V
• Manufacturer: Central Semiconductor

Specifications of 2N5060

• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 30 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 1.2 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.35 mA
• Holding Current (ih Max): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
*Indicates JEDEC Registered Data.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Off−State Voltage (Note 1)
On-State Current RMS (180 Conduction Angles; T
*Average On-State Current
*Peak Non-repetitive Surge Current,
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
*Forward Peak Gate Power (Pulse Width v 1.0 msec; T
*Forward Average Gate Power (T
*Forward Peak Gate Current (Pulse Width v 1.0 msec; T
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; T
*Operating Junction Temperature Range
*Storage Temperature Range
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
*Lead Solder Temperature (Lead Length q 1/16 from case, 10 s Max)
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
curved surface.
(T
50 to 60 Hz, Gate Open)
(180 Conduction Angles)
(T
(T
T
(1/2 cycle, Sine Wave, 60 Hz)
(180 Conduction Angles)
(T
(T
DRM
A
J
C
C
C
C
= 25 C
= *40 to 110 C, Sine Wave,
= 67 C)
= 102 C)
= 67 C)
= 102 C)
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
(T
J
= 25 C unless otherwise noted)
A
= 25 C, t = 8.3 ms)
Characteristic
2N5060
2N5061
2N5062
2N5064
Rating
C
= 80 C)
A
http://onsemi.com
A
A
2N5060 Series
= 25 C)
= 25 C)
= 25 C)
2
Symbol
Symbol
I
P
V
V
T(RMS)
V
I
I
R
R
I
P
T(AV)
T(AV)
G(AV)
I
T
DRM,
TSM
RRM
RGM
GM
T
I
GM
qJC
qJA
2
stg
−
J
t
−40 to +110
−40 to +150
+230*
Value
0.255
0.255
0.51
0.51
0.01
Max
100
200
200
0.8
0.4
0.1
1.0
5.0
30
60
10
75
Unit
Unit
A
C/W
C/W
W
W
V
A
A
A
A
A
V
2
C
C
C
s