HN7G08FE-A(TE85L,F Toshiba, HN7G08FE-A(TE85L,F Datasheet

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HN7G08FE-A(TE85L,F

Manufacturer Part Number
HN7G08FE-A(TE85L,F
Description
Bipolar Small Signal Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
Manufacturer
Toshiba
Datasheet

Specifications of HN7G08FE-A(TE85L,F

Dc Collector/base Gain Hfe Min
300
Gain Bandwidth Product Ft
130 MHz
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
2-2J1E
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 400 mA
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
General-Purpose Amplifier Applications
Switching and Muting Switch Applications
Q1
Q1: 2SA1955F
Q2: RN1106F
Q1 Maximum Ratings
Q2 Maximum Ratings (
Q1, Q2 Common Maximum Ratings (Ta = 25°C)
* Total rating.
Low saturation voltage: V
Large collector current: I
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Characteristic
Characteristic
Characteristic
C
CE (sat)
= −400 mA (max)
(Ta = 25°C)
@I
Ta = 25°C
C
= −10 mA/I
(1) = −15 mV (typ.)
Symbol
Symbol
TOSHIBA Multichip Discrete Device
Symbol
HN7G08FE
V
V
V
V
V
V
T
P
CBO
CEO
EBO
CBO
CEO
EBO
I
I
I
T
C
C
stg
B
)
C
j
*
B
= −0.5 mA
−55~150
Rating
Rating
Rating
−400
−15
−12
−50
100
100
150
−5
50
50
5
1
Unit
Unit
Unit
mW
mA
mA
mA
°C
°C
V
V
V
V
V
V
JEDEC
JEITA
TOSHIBA
Weight: 0.003 g (typ.)
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
2-2J1E
HN7G08FE
2005-03-23
Unit: mm

Related parts for HN7G08FE-A(TE85L,F

HN7G08FE-A(TE85L,F Summary of contents

Page 1

... Weight: 0.003 g (typ.) − EBO −400 − Symbol Rating Unit CBO CEO EBO I 100 mA C Symbol Rating Unit P * 100 mW C °C T 150 j −55~150 °C T stg 1 HN7G08FE Unit: mm (E1) 1. EMITTER1 (B1) 2. BASE1 (C2) 3. COLLECTOR2 (E2) 4. EMITTER2 (B2) 5. BASE2 (C1) 6. COLLECTOR1 ― ― 2-2J1E 2005-03-23 ...

Page 2

... ― MHz ― ― R1 ― ― R1/R2 Equivalent Circuit HN7G08FE Min Typ. Max Unit − 100 ― ― nA − 100 ― ― nA 300 ― 1000 − 15 − 30 ― mV − 110 − 250 ― − 0.87 − 1.2 ― V ― 130 ― ...

Page 3

... COMMON EMITTER IC/ 25℃ -1 -25 - -0.1 -100 -1000 - -1 -0.1 COLLECTOR CURRENT IC (A) 100 10 1 -1.2 -1.6 - -0.1 COLLECTOR-BASE VOLTAGE VCB (V) 3 HN7G08FE hFE - IC COMMON EMITTER VCE = - 100°C 25 -25 -10 -100 -1000 VBE(sat -10 -100 -1000 Cob - VCB 1MHz ℃ -1 -10 -100 2005-03-23 ...

Page 4

... Q2 4 HN7G08FE 2005-03-23 ...

Page 5

... Q2 common – 200 150 100 100 125 AMBIENT TEMPERATURE Ta (°C) *:Total rating 150 175 5 HN7G08FE 2005-03-23 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 HN7G08FE 030619EAA 2005-03-23 ...

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