HN7G06FU-A(TE85L,F Toshiba, HN7G06FU-A(TE85L,F Datasheet

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HN7G06FU-A(TE85L,F

Manufacturer Part Number
HN7G06FU-A(TE85L,F
Description
Bipolar Small Signal Vceo=-12V Vceo=50V 47K x 47Kohms
Manufacturer
Toshiba
Datasheet

Specifications of HN7G06FU-A(TE85L,F

Dc Collector/base Gain Hfe Min
300
Gain Bandwidth Product Ft
130 MHz
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
2-2J1A
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 500 mA
Power Dissipation
200 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
• Power Management Switch Applications, Inverter
Q1 Absolute Maximum Ratings
Q2 Absolute Maximum Ratings
Q1, Q2 Common Ratings
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
*: Total rating. 130 mW per element should not be exceeded.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
Characteristic
Characteristic
(Ta = 25°C)
TOSHIBA Multichip Discrete Device
Symbol
Symbol
Symbol
HN7G06FU
V
V
V
V
V
V
T
P
CBO
CEO
EBO
CBO
CEO
EBO
I
I
I
T
stg
C
B
(Ta = 25°C)
C
C
(Ta = 25°C)
j
*
−55~150
Rating
Rating
Rating
−500
−15
−12
−50
100
200
150
−5
50
50
10
1
Unit
Unit
Unit
mW
mA
mA
mA
°C
°C
V
V
V
V
V
V
Weight: 0.0068 g (typ.)
JEDEC
JEITA
TOSHIBA
Marking
Q1
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
6
1
Equivalent
Circuit
7 4 A
5
2
HN7G06FU
2-2J1A
2007-11-01
4
3
Q2
Type Name
hFE Rank
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Unit: mm

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HN7G06FU-A(TE85L,F Summary of contents

Page 1

... Symbol Rating Unit V 50 CBO V 50 CEO V 10 EBO I 100 mA C (Ta = 25°C) Symbol Rating Unit P * 200 150 j −55~150 T stg 1 HN7G06FU V 1.EMITTER1 V 2.BASE1 3.COLLECTOR2 V 4.EMITTER2 5.BASE2 6.COLLECTOR1 JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 0.0068 g (typ Marking °C °C Equivalent Circuit ...

Page 2

... I(ON 0 I(OFF MHz ⎯ R1 ⎯ R1/R2 2 HN7G06FU Min Typ. Max ⎯ ⎯ −100 ⎯ ⎯ −100 ⎯ 300 1000 ⎯ −15 −30 ⎯ −110 −250 ⎯ −0.87 −1.2 ⎯ ⎯ 130 ⎯ ⎯ 4.2 ⎯ ⎯ 40 OUTPUT ⎯ ⎯ 280 ...

Page 3

... COMMON EMITTER VCE = -2V 1 -1.2 -1.6 - -0.1 3 HN7G06FU hFE - IC COMMON EMITTER VCE = - 100°C 25 -25 -1 -10 -100 COLLECTOR CURRENT IC (A) VBE(sat COMMON EMITTER IC/ ℃ -1 -10 -100 COLLECTOR CURRENT IC (A) Cob - VCB 1MHz ℃ ...

Page 4

... Q2 4 HN7G06FU 2007-11-01 ...

Page 5

... Q1, Q2 common * P – 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *:Total rating 125 150 175 5 HN7G06FU 2007-11-01 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 HN7G06FU 2007-11-01 ...

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