ZXMN6A09DN8TA Diodes Inc, ZXMN6A09DN8TA Datasheet - Page 5

• Manufacturer Part Number: ZXMN6A09DN8TA
• Description: MOSFET Power Dl 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A09DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMN6A09DN8
Typical characteristics
Issue 6 - January 2007
5
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