ZXMN6A09DN8TA Diodes Inc, ZXMN6A09DN8TA Datasheet - Page 7

• Manufacturer Part Number: ZXMN6A09DN8TA
• Description: MOSFET Power Dl 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A09DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package outline - SO8
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
DIM
A1
A
D
H
E
L
0.053
0.004
0.189
0.228
0.150
0.016
Min.
Inches
0.069
0.010
0.197
0.244
0.157
0.050
Max.
Min.
1.35
0.10
4.80
5.80
3.80
0.40
Millimeters
Max.
1.75
0.25
5.00
6.20
4.00
1.27
7
DIM
e
b
h
c
-
0.013
0.008
0.010
Min.
0°
-
0.050 BSC
Inches
ZXMN6A09DN8
0.020
0.010
0.020
Max.
8°
-
Min.
www.zetex.com
0.33
0.19
0.25
0°
Millimeters
-
1.27 BSC
Max.
0.51
0.25
0.50
8°
-