MOSFET Small Signal N-Chnl 50V

BSS138TA

Manufacturer Part NumberBSS138TA
DescriptionMOSFET Small Signal N-Chnl 50V
ManufacturerDiodes Inc
BSS138TA datasheet
 


Specifications of BSS138TA

Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)3.5 Ohm @ 10 V
Drain-source Breakdown Voltage50 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current0.2 APower Dissipation300 mW
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseSOT-23Continuous Drain Current Id200mA
Drain Source Voltage Vds50VOn Resistance Rds(on)3.5ohm
Rds(on) Test Voltage Vgs5VThreshold Voltage Vgs Typ1.5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996
PARTMARKING DETAIL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
=25°C
amb
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
– SS
SYMBOL
V
DS
=25°C
I
amb
D
I
DM
V
GS
P
tot
T
:T
j
stg
= 25°C unless otherwise stated).
amb
SYMBOL MIN.
MIN.
MAX. UNIT CONDITIONS.
BV
50
DSS
V
0.5
1.5
GS(th)
I
100
GSS
I
0.5
DSS
5
100
R
3.5
DS(on)
g
120
fs
C
50
iss
C
25
oss
C
8
rss
t
10
d(on)
t
10
r
t
15
d(off)
t
25
f
3 - 72
BSS138
D
SOT23
VALUE
UNIT
50
200
mA
800
mA
20
360
mW
-55 to +150
°C
V
I
=0.25mA, V
=0V
D
GS
V
I
=1mA, V
= V
D
DS
GS
nA
V
= 20V, V
=0V
GS
DS
V
=50V, V
=0
A
DS
GS
V
=50V, V
=0V, T=125°C
A
DS
GS
V
=20V, V
=0
nA
DS
GS
V
=5V,I
=200mA
GS
D
mS
V
=25V,I
=200mA
DS
D
pF
pF
V
=25V, V
=0V, f=1MHz
DS
GS
pF
ns
ns
V
30V, I
=280mA
DD
D
ns
ns
S
G
V
V
(2)

BSS138TA Summary of contents

  • Page 1

    SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source Voltage Power Dissipation at T =25°C amb Operating and Storage Temperature ...

  • Page 2

    TYPICAL CHARACTERISTICS 1.0 V =10V 5V GS 0.8 0.6 0.4 0 Pulsed Test -Drain Source Voltage (Volts) DS Saturation Characteristics 500 400 300 V =25V Pulsed Test 200 100 ...

  • Page 3

    BSS138 TYPICAL CHARACTERISTICS =200mA 0.2 0.4 0.6 0.8 Q-Charge (nC) Typical Gate Charge vs. Gate-Source Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100 A Typical ...