BSS138TA Diodes Inc, BSS138TA Datasheet - Page 2

• Manufacturer Part Number: BSS138TA
• Description: MOSFET Small Signal N-Chnl 50V
• Manufacturer: Diodes Inc

Specifications of BSS138TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 200mA
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 3.5ohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
1
500
400
300
200
100
0
1.0
0.8
0.6
0.4
0.2
0
0.1
0
0
C
C
iss
Typical Transconductance vs.
rss
V
V
DS
Saturation Characteristics
I
V
DS
D
GS
0.2
-Drain Current (Amperes)
Typical Capacitance vs.
Drain - Source Voltage
=10V
1
-Drain Source Voltage (Volts)
-Drain Source Voltage (Volts)
C
Drain Current
oss
1
80 s Pulsed Test
0.4
2
5V
TYPICAL CHARACTERISTICS
0.6
3
V
80 s Pulsed Test
10
DS
NOTE:-V
F=1MHz
=25V
4.5V
0.8
4
GS
=0V
3.5V
2.5V
C
C
C
4V
3V
2V
iss
rss
oss
1.0
100
5
3 - 73
10
1.0
500
400
300
200
100
0
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
0
Normalised R
-40
Typical Transconductance vs.
V
GS
Typical On Resistance vs.
I
Gate - Source Voltage
D
2
-Drain Current (Amperes)
-Gate Source Voltage (Volts)
vs. Temperature
T-Temperature ( °C)
0
Drain Current
4
V
80 s Pulsed Test
40
DS(on)
DS
0.1
=25V
BSS138
R
V
I
D
DS(on)
GS
6
=200mA
80
And V
=5V
V
GS
AT
0
=2.5V
V
V
I
D
GS(th)
DS
=1mA
120
8
=V
GS(th)
3V 3.5V
GS
AT
160
1.0
10
4V
5V
7V
10V