FM25H20-DG Ramtron, FM25H20-DG Datasheet

F-RAM 2Mb (256kX8) 3V

FM25H20-DG

Manufacturer Part Number
FM25H20-DG
Description
F-RAM 2Mb (256kX8) 3V
Manufacturer
Ramtron
Datasheet

Specifications of FM25H20-DG

Operating Supply Voltage
2.7 V to 3.6 V
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
DFN-8
Memory Size
2Mbit
Memory Configuration
256K X 8
Interface Type
Serial, SPI
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TDFN
No. Of Pins
8
Rohs Compliant
Yes
Ic Interface Type
Serial, SPI
Nvram Features
2 Mbit Ferroelectric Nonvolatile RAM, Low Power Consumption, Write Protection Scheme
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FM25H20-DG
Manufacturer:
RAMTRON
Quantity:
1 260
Part Number:
FM25H20-DGTR
Manufacturer:
ATMEL
Quantity:
13 400
Pre-Production
FM25H20
2Mb Serial 3V F-RAM Memory
Features
2M bit Ferroelectric Nonvolatile RAM
Very Fast Serial Peripheral Interface - SPI
Description
The FM25H20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25H20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers virtually unlimited write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25H20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25H20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The FM25H20 uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. Device specifications are guaranteed
over an industrial temperature range of -40°C to
+85°C.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Rev. 2.2
Sept. 2010
Organized as 256K x 8 bits
High Endurance 100 Trillion (10
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
14
) Read/Writes
Write Protection Scheme
Low Power Consumption
Industry Standard Configurations
Pin Configuration
Pinout is equivalent to other SPI F-RAM devices.
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Ordering Information
FM25H20-DG
FM25H20-DGTR
FM25H20-G
FM25H20-GTR
Hardware Protection
Software Protection
Low Voltage Operation 2.7V – 3.6V
Sleep Mode Current 3 μA (typ.)
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS TDFN Package
8- pin “Green”/RoHS EIAJ SOIC Package
VSS
W
VSS
Q
S
/W
/S
Q
1850 Ramtron Drive, Colorado Springs, CO 80921
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (2.7 to 3.6V)
Ground
1
2
3
4
1
2
3
4
Top View
8-pin “Green”/RoHS TDFN
8-pin “Green”/RoHS TDFN,
Tape & Reel
8-pin “Green”/RoHS EIAJ SOIC
8-pin “Green”/RoHS EIAJ
SOIC, Tape & Reel
Ramtron International Corporation
(800) 545-FRAM, (719) 481-7000
8
7
6
5
8
7
6
5
http://www.ramtron.com
VDD
/HOLD
C
D
VDD
HOLD
C
D
Page 1 of 15

Related parts for FM25H20-DG

FM25H20-DG Summary of contents

Page 1

... TDFN Package • 8- pin “Green”/RoHS EIAJ SOIC Package Pin Configuration VSS VSS Pinout is equivalent to other SPI F-RAM devices. Pin Name /S /W /HOLD VDD VSS Ordering Information FM25H20-DG FM25H20-DGTR FM25H20-G FM25H20-GTR Top View /S VDD /HOLD VDD 1 ...

Page 2

... Q may be connected to D for a single pin data interface. VDD Supply Power Supply (2.7V to 3.6V) VSS Supply Ground Rev. 2.2 Sept. 2010 18 Counter Data I/O Register Nonvolatile Status Figure 1. Block Diagram specifications. DD FM25H20 - 2Mb SPI FRAM 32768 x 64 FRAM Array Register Page ...

Page 3

... For both modes, data is clocked into the FM25H20 on the rising edge of C and data is expected on the first rising edge after /S goes active. If the clock starts from a high state, it will fall prior to the first data transfer in order to create the first rising edge ...

Page 4

... Figure 2. 512KB System Configuration with SPI port Figure 3. System Configuration without SPI port SPI Mode 0: CPOL=0, CPHA=0 SPI Mode 3: CPOL=1, CPHA=1 Rev. 2.2 Sept. 2010 Figure 4. SPI Modes 0 & 3 FM25H20 - 2Mb SPI FRAM Page ...

Page 5

... Power Up to First Access The FM25H20 is not accessible for a period of time (1 ms) after power up. Users must comply with the timing parameter t , which is the minimum time PU from V (min) to the first /S low. DD Data Transfer All data transfers to and from the FM25H20 occur in 8-bit groups. They are synchronized to the clock signal (C), and they transfer most significant bit (MSB) first ...

Page 6

... Status Register. Reading Status provides information about the current state of the write protection features. Following the RDSR op- code, the FM25H20 will return one byte with the contents of the Status Register. The Status Register is described in detail in the section below. ...

Page 7

... The SPI interface, which is capable of a relatively high clock frequency, highlights the fast write capability of the F-RAM technology. Unlike Serial Flash, the FM25H20 can perform sequential writes at bus speed. No page buffer is needed and any number of sequential writes may be performed. Write Operation All writes to the memory array begin with a WREN op-code ...

Page 8

... Q Sleep Mode A low power mode called Sleep Mode is implemented on the FM25H20. The device will enter this low power state when the SLEEP op-code (B9h) is clocked in, and the device seeing the rising edge of /S. Once in sleep mode, the C and D pins are ignored and Q will hi-Z state, but the device continues to monitor the /S pin ...

Page 9

... Endurance The FM25H20 is capable of being accessed at least 14 10 times, reads or writes. An F-RAM memory operates with a read and restore mechanism. Therefore, an endurance cycle is applied on a row basis for each access (read or write) to the memory array. The F-RAM architecture is based on an array of rows and columns. Rows are defined by A17-A3 and column addresses by A2-A0 ...

Page 10

... DD Min Typ 2.7 3 -0.4 0 – 0 other inputs -0.2V FM25H20 - 2Mb SPI FRAM Ratings -1.0V to +4.5V -1.0V to +4.5V and V < V +1. -55° 125°C 260° C 2kV 1kV 200V MSL-1 (TDFN) MSL-1 (EIAJ) Max Units Notes 3 1 μ A 150 μ A 270 3 μ ...

Page 11

... This parameter is characterized and not 100% tested. Data Retention (T = -40°C to +85°C) A Symbol Parameter T Data Retention DR Rev. 2.2 Sept. 2010 = 2.7V to 3.6V 30pF Min 3.3V) DD Min - - Min Units 10 Years FM25H20 - 2Mb SPI FRAM Max Units Notes 40 MHz 2 2 Max Units Notes 8 ...

Page 12

... V Rise Time Fall Time VF DD Notes 1. This parameter is characterized and not 100% tested. 2. Slope measured at any point Rev. 2.2 Sept. 2010 1 ODV min 2.7V to 3.6V) DD min) DD waveform. FM25H20 - 2Mb SPI FRAM CSH Min Max Units Notes μ μ - 450 s μ 50 ...

Page 13

... R=Ramtron, G=”green” TDFN package XXXX=base part number LLLL= lot code RGXXXX YY=year, WW=work week LLLL YYWW Example: “Green” TDFN package, FM25H20, Lot 0012, Year 2010, Work Week 10 RG5H20 0012 1010 Rev. 2.2 Sept. 2010 FM25H20 - 2Mb SPI FRAM Page ...

Page 14

... EIAJ SOIC Package Marking Scheme Legend: XXXXXX= part number LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week XXXXXXX-G LLLLLLL FM25H20, “Green” EIAJ SOIC package, Year 2009, Work Week 40 RIC YYWW FM25H20-G B90003G1 RIC 0940 Rev. 2.2 Sept. 2010 Recommended PCB Footprint 5 ...

Page 15

... Added EIAJ SOIC package. Added ESD ratings. Changed recommended DFN pcb footprint. Updated lead temperature rating in Abs Max table. 2.2 9/21/2010 Modified DFN mechanical drawing and recommended pcb footprint. Date code of new package starts at 1010. Rev. 2.2 Sept. 2010 FM25H20 - 2Mb SPI FRAM , I , and I limits. Changed specs ...

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