NTE6402 NTE ELECTRONICS, NTE6402 Datasheet
NTE6402
Manufacturer Part Number
NTE6402
Description
Replacement Semiconductors TO-92 UNIJUNCT TRAN
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE6402.pdf
(2 pages)
Specifications of NTE6402
Repetitive Peak Forward Current Itrm
1A
Peak Emitter Current
5µA
Valley Current Iv
50µA
Power Dissipation Pd
300mW
Operating Temperature Range
-50°C To +100°C
No. Of Pins
3
Current Rating
1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic
low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and
cathode.
This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many
advantages over conventional unijunction transistors. The designer can select R
unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peak–point emitter
current, and valley–point current to meet his particular needs.
PUT’s are specifically charactrized for long interval timers and other applications requiring low leak-
age and low peak point current. PUT’s similar types have been characterized
Applications:
D SCR Trigger
D Pulse and Timing Circuits
D Oscillators
D Sensing Circuits
D Sweep Circits
Absolute Maximum Ratings: (T
Gate–Cathode Forward Voltage
Gate–Cathode Reverse Voltage
Gate–Anode Reverse Voltage
Anode–Cathode Voltage
DC Anode Current (Note 1)
Peak Anode, Recurrent Forward Current
Peak Anode, Non–Recurrent Forward Current (10 s)
Capacitive Discharge Energy (Note 2)
Total Average Power (Note 1)
Operating Ambient Temperature Range (Note 1)
Note 1. Derate currents and powers 1%/ C above 25 C.
Note 2. E = 1/2 CV
Pulse Width = 100 s, Duty Cycle = 1%
Pulse Width = 20 s, Duty Cycle = 1%
Programmable Unijunction Transistor (PUT)
2
capacitor discharge energy with no current limiting.
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A
= +25 C unless otherwise specified)
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NTE6402
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1
and R
–50 to +100 C
2
to program
300mW
150mA
250 J
20mA
+40V
+40V
–5V
40V
1A
2A
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NTE6402 Summary of contents
Page 1
... Programmable Unijunction Transistor (PUT) Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peak– ...
Page 2
Electrical Characteristics: (T Parameter Peak Current Offset Voltage Valley Current Anode Gate–Anode Leakage Current Gate–Cathode Leakage Current Forward Voltage Pulse Output Voltage Pulse Voltage Rate of Rise .210 (5.33) Max .500 (12.7) Min .100 (2.54) .105 (2.67) ...