NTE2382 NTE ELECTRONICS, NTE2382 Datasheet
NTE2382
Manufacturer Part Number
NTE2382
Description
Replacement Semiconductors TO-220 N-CH 100V 8A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2382.pdf
(3 pages)
Specifications of NTE2382
Transistor Polarity
N Channel
Continuous Drain Current Id
9.2A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximim Ratings:
Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Drain Current, Pulsed (Note 3), I
Gate Current, Pulsed, I
Single Pulsed Avalanvhe Energy (Note 4), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Case–to–Sink (Note 5), R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. T
Note 2. Pulse Test: Pulse Width
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 64mH, V
Note 5. Mounting surface flat, smooth, and greased.
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
J
= +25 to +150 C
DS(ON)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
DD
GS
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
= 25V, R
= 1M , Note 1), V
N–Channel Enhancement Mode,
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DM
G
DSS
(Compl to NTE2383)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25 , Starting T
High Speed Switch
300 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
opr
thJC
NTE2382
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DGR
AS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C.
2%.
L
. . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
62.5 C/W
0.4W/ C
2.5 C/W
0.5 C/W
+300 C
36mJ
100V
100V
9.2A
6.5A
1.5A
9.2A
50W
20V
37A
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NTE2382 Summary of contents
Page 1
... N–Channel Enhancement Mode, Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower R DS(ON) D Improved Inductive Ruggedness D Fast Switching Times ...
Page 2
Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse Gate Threshold Voltage Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...