NTE128 NTE ELECTRONICS, NTE128 Datasheet

Replacement Semiconductors TO-39 NPN AUDIO OUT

NTE128

Manufacturer Part Number
NTE128
Description
Replacement Semiconductors TO-39 NPN AUDIO OUT
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE128

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Transition Frequency Typ Ft
400MHz
Power Dissipation Pd
800mW
Dc Collector Current
1A
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack-
age designed primarily for amplifier and switching applications. These devices features high break-
down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/16” from case, 60sec max), T
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE129 (PNP).
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
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Silicon Complementary Transistors
EBO
CBO
A
C
NTE128 (NPN) & NTE129 (PNP)
CEO
= +25 C), P
= +25 C), P
Audio Output, Video, Driver
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stg
C
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D
D
J
thJC
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thJA
L
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–65 to +200 C
–65 to +200 C
7.15mW/ C
28.6mW/ C
4.6mW/ C
40mW/ C
16.5 C/W
89.5 C/W
140 C/W
20 C/W
+300 C
1.25W
140V
0.8W
80V
80V
5W
7W
7V
5V
1A

Related parts for NTE128

NTE128 Summary of contents

Page 1

... Silicon Complementary Transistors Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack- age designed primarily for amplifier and switching applications. These devices features high break- down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range ...

Page 2

... NTE128 NTE129 Collector Cutoff Current NTE128 NTE129 Emitter Cutoff Current NTE128 NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 NTE129 Collector–Emitter Saturation Voltage NTE128 NTE129 Base–Emitter Saturation Voltage NTE128 NTE129 Base–Emitter ON Voltage (NTE129 Only) Note 2. Pulse Test: Pulse Width ...

Page 3

... Output Capacitance NTE128 NTE129 Input Capacitance NTE128 NTE129 Small–Signal Current Gain NTE128 NTE129 Collector–Base Time Constant (NTE128 Only) Noise Figure (NTE128 Only) Switching Characteristics (NTE129 Only) Storage Time Turn–On Time Fall Time = +25 C unless otherwise specified) A Symbol Test Conditions f T ...

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