NTE2501 NTE ELECTRONICS, NTE2501 Datasheet
NTE2501
Manufacturer Part Number
NTE2501
Description
Replacement Semiconductors TO-126ML NPN VID OUT
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2502.pdf
(2 pages)
Specifications of NTE2501
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
600mV
Transition Frequency Typ Ft
70MHz
Power Dissipation Pd
1.5W
Dc Collector Current
100mA
Dc Current Gain Hfe
200
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Breakdown Voltage
D Excellent High Frequency Characteristics
Applications:
D High Definition CRT Display
D Color TV Chroma Output, High Breakdown Voltage Drivers
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Continuous
Peak
T
T
A
C
= +25 C
= +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
EBO
NTE2501 (NPN) & NTE2502 (PNP)
CBO
High Voltage for Video Output
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
I
I
h
CBO
EBO
f
FE
T
V
V
V
V
CB
EB
CE
CE
= 4V, I
= 200V, I
= 10V, I
= 30V, I
Test Conditions
C
C
C
= 0
E
= 10mA
= 10mA
= 0
Min
100
–
–
–
Typ
70
–
–
–
–55 to +150 C
Max Unit
200
0.1
0.1
–
+150 C
100mA
200mA
MHz
300V
300V
1.5W
A
A
7W
5V
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NTE2501 Summary of contents
Page 1
... NTE2501 (NPN) & NTE2502 (PNP) Silicon Complementary Transistors Features: D High Breakdown Voltage D Excellent High Frequency Characteristics Applications: D High Definition CRT Display D Color TV Chroma Output, High Breakdown Voltage Drivers Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter Output Capacitance NTE2501 NTE2502 Reverse Transfer Capacitance NTE2501 NTE2502 Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage .118 (3.0) Dia = +25 C unless otherwise specified) ...