NTE234 NTE ELECTRONICS, NTE234 Datasheet
NTE234
Manufacturer Part Number
NTE234
Description
Replacement Semiconductors TO-92 HIGN AF PREAMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE234.pdf
(2 pages)
Specifications of NTE234
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
300mV
Transition Frequency Typ Ft
100MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Dc Current Gain Hfe
700
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE2349
Manufacturer:
AVX
Quantity:
23 000
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Features:
D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Steady State Collector Current, I
Emitter Current, I
Collector Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Breakdown Voltage
DC Current Gain
Collector–to–Emitter
Parameter
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
Low Noise, High Gain Amplifier
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
V
Symbol
A
(BR)CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
= +25 C unless otherwise specified)
h
CBO
EBO
FE
J
V
V
I
V
NTE234
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
EB
CE
= 1mA, I
= 5V, I
= 120V, I
= 6V, I
Test Conditions
C
C
B
= 0
= 0
= 2mA
E
= 0
Min
120
350
–
–
Typ
–
–
–
–
–55 to +125 C
–55 to +125 C
Max
100
100
700
–
300mW
100mA
100mA
Unit
120V
120V
nA
nA
V
5V
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NTE234 Summary of contents
Page 1
... Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Saturation Voltage Collector–to–Emitter Base–to–Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test Conditions 10mA 1mA ...