NTE108 NTE ELECTRONICS, NTE108 Datasheet
NTE108
Manufacturer Part Number
NTE108
Description
Replacement Semiconductors TO-92 NPN RF/IF AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE108.pdf
(2 pages)
Specifications of NTE108
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency Typ Ft
600MHz
Power Dissipation Pd
625mW
Dc Collector Current
50mA
Dc Current Gain Hfe
20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise,
high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating
circuits with rise and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient (Note 1), R
Note 1. R
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Derate Above 25°C
ΘJA
Parameter
is measured with the device soldered into a typical printed circuit board.
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Frequency Amplifier
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE108 and NTE108−1
Silicon NPN Transistor
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
C
C
E
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, I
= 3mA, I
= 1µA, I
= 15V, I
Test Conditions
thJA
E
B
C
= 0
E
= 0, Note 2
= 0
= 0
. . . . . . . . . . . . . . . . . . . . . . . . .
Min Typ Max Unit
15
30
3
−
−55° to +150°C
−55° to +150°C
−
−
−
−
+83.3°C/W
+200°C/W
10
12mW/°C
−
−
−
625mW
50mA
nA
15V
30V
V
V
V
3V
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NTE108 Summary of contents
Page 1
... Description: The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector−Emitter Voltage, V Collector− ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics Current Gain−Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Common−Emitter Amplifier Power Gain Power Output Oscillator Collector Efficiency Note 2. ...