NTE10 NTE ELECTRONICS, NTE10 Datasheet
NTE10
Manufacturer Part Number
NTE10
Description
TRANSISTOR,BJT,NPN,12V V(BR)CEO,70MA I(C),TO-92
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE10.pdf
(2 pages)
Specifications of NTE10
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Features:
D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D High Cutoff Frequency: f
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Collector Power Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
j
UHF Low Noise Wide–Band Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CER
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5GHz Typ
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
|S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
MAG
I
I
A
h
C
CBO
C
EBO
NF
21e
f
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
T
ob
re
= +25 C unless otherwise specified)
|
2
V
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CB
CE
CE
CE
NTE10
= 2V, I
= 12V, I
= 10V, I
= 10V, I
= 10V, f = 1MHz
= 10V, f = 1MHz
= 10V, I
= 10V, I
= 10V, I
Test Conditions
C
E
C
C
C
C
C
= 0
= 0
= 20mA
= 20mA
= 20mA, f = 0.9GHz
= 5mA, f = 0.9GHz
= 5mA, f = 0.9GHz
Min
40
–
–
–
–
–
8
–
–
Typ
5.0
0.8
0.5
2.2
10
14
–
–
–
–55 to +150 C
Max Unit
200
1.0
1.1
4.5
10
–
–
–
–
500mW
+150 C
70mA
30mA
GHz
pF
pF
dB
dB
dB
20V
12V
A
A
3V
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NTE10 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Maximum Available Power Gain Noise Figure NTE10 Silicon NPN Transistor = 5GHz Typ T = +25 C unless otherwise specified CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...