NTE46 NTE ELECTRONICS, NTE46 Datasheet

Replacement Semiconductors TO-92 NPN GP DAR AMP

NTE46

Manufacturer Part Number
NTE46
Description
Replacement Semiconductors TO-92 NPN GP DAR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE46

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
625mW
Dc Collector Current
500mA
Dc Current Gain Hfe
10000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Voltage
Emitter Cutoff Current
Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
Darlington, General Purpose Amplifier,
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CES
(BR)CBO
(BR)EBO
I
I
I
CBO
CES
EBO
Preamp, Driver
D
D
J
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE46
CB
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
= 10 A, I
= 100 A, V
= 100 A, I
= 10V, I
= 80V, I
= 80V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
E
E
BE
= 0
BE
= 0
= 0
= 0
= 0
= 0
Min
100
100
12
Typ
–55 to +150 C
–55 to +150 C
Max Unit
100
500
100
12mW/ C
83.3 C/W
200 C/W
5mW/ C
625mW
500mA
100V
100V
1.5W
nA
nA
nA
V
V
V
12V

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NTE46 Summary of contents

Page 1

... Emitter–Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current NTE46 Silicon NPN Transistor Preamp, Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Note 1. Pulse Test: Pulse Width  f Note ...

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