NTE326 NTE ELECTRONICS, NTE326 Datasheet
NTE326
Manufacturer Part Number
NTE326
Description
Replacement Semiconductors TO-92 JFET GP AF AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE326.pdf
(2 pages)
Specifications of NTE326
Breakdown Voltage Vbr
40V
Gate-source Cutoff Voltage Vgs(off) Max
7.5V
Power Dissipation Pd
310mW
No. Of Pins
3
Peak Reflow Compatible (260 C)
No
Transistor Polarity
P Channel
Continuous Drain Current Id
2mA
Gate-source Breakdown Voltage
7.5V
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Absolute Maximum Ratings: (T
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Functional Characteristics
Noise Figure
Equivalent Short–Circuit Input Noise
Voltage
Derate Above 25 C
Parameter
DG
G(f)
Silicon P–Channel JFET Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose AF Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
= +25 C unless otherwise specified)
GSR
V
A
Symbol
V
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
GS(off)
I
|y
V
C
C
= +25 C unless otherwise specified)
|y
GSS
DSS
NF
e
GS
os
rss
iss
fs
n
|
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
D
J
I
V
V
I
I
V
V
V
V
V
V
f = 100Hz, BW = 1Hz
V
BW = 1Hz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
D
D
NTE326
GS
GS
DS
DS
DS
DS
DS
DS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10 A, V
= 1 A, V
= 0.2mA, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 20V, V
= 20V, V
Test Conditions
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 15V
= 0
= 0
= 0, T
= 0, f = 1kHz
= 0, f = 1kHz
= 0, f = 1kHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0, R
= 0, f = 100Hz,
= 15V
A
G
= +100 C
= 1M ,
1500
Min
1.0
0.8
40
–
–
2
–
–
–
–
–
Typ
1.0
60
–
–
–
–
–
–
–
–
5
1
–65 to +135 C
–55 to +150 C
5000
Max
115
7.5
4.5
2.5
75
–
5
1
9
7
2
2.82mW/ C
nV/pHz
310mW
Unit
mA
mho
mho
nA
dB
10mA
pF
pF
V
V
V
A
40V
40V
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NTE326 Summary of contents
Page 1
... Input Capacitance Reverse Transfer Capacitance Functional Characteristics Noise Figure Equivalent Short–Circuit Input Noise Voltage NTE326 General Purpose AF Amplifier = +25 C unless otherwise specified GSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...