NTE271 NTE ELECTRONICS, NTE271 Datasheet - Page 2

Replacement Semiconductors TO-218 PNP DAR PWR

NTE271

Manufacturer Part Number
NTE271
Description
Replacement Semiconductors TO-218 PNP DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE271

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-100V
Power Dissipation Pd
125W
Dc Collector Current
-10A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Electrical Characteristics (Cont’d): (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
Fall Time
B
Parameter
NTE270
B
C
(15.24)
.600
(3.96)
.156
Dia.
C
C
E
E
Symbol
V
V
.216 (5.45)
CE(sat)
BE(sat)
h
C
t
t
t
t
FE
d
s
r
f
= +25 C unless otherwise specified)
.055 (1.4)
(13.97)
.550
I
I
I
I
I
V
I
I
I
T
.173 (4.4)
B
C
C
C
C
C
B1
J
CC
= 20mA, Duty Cycle
= 5A, V
= 10A, V
= 5A, I
= 10A, I
= 10A, I
= +25 C
= I , R & R Varied,
= I
.060 (1.52)
= 30V, I
Test Conditions
(10.92)
B2
(12.7)
.430
.500
Min
, R
B
CE
B
B
2%.
= 10mA
C
CE
= 40mA
= 40mA
C
& R
= 4V
= 5A,
= 4V
B
B
Varied,
.015 (0.39)
2%,
NTE271
NOTE: Dotted line indicates that
case may have square corners
1000
Min
500
0.15
0.55
Typ
2.5
2.5
C
E
Max Unit
2.0
3.0
3.5
V
V
V
s
s
s
s

Related parts for NTE271