NTE6401 NTE ELECTRONICS, NTE6401 Datasheet
NTE6401
Manufacturer Part Number
NTE6401
Description
Replacement Semiconductors TO-18 UNIJUNCT TRANS
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE6401.pdf
(2 pages)
Specifications of NTE6401
Repetitive Peak Forward Current Itrm
2A
Peak Emitter Current
1µA
Valley Current Iv
6mA
Power Dissipation Pd
300mW
Operating Temperature Range
-65°C To +125°C
No. Of Pins
2
Current Rating
50A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 5 A (Max)
D Low Emitter Reverse Current: .005 A (Typ)
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T
Power Dissipation (Note 1), P
RMS Emitter Current, I
Peak Pulse Emitter Current (Note 2), i
Emitter Reverse Voltage, V
Interbase Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1 Derate 3mW/ C increase in ambient temperature. The total power dissipation (available
Note 2 Capacitor discharge – 10 F or less, 30 volts or less
Electrical Characteristics: (T
Note 3. Intrinsic standoff ratio,
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance Temperature
Coefficient
power to Emitter and Base–Two) must be limited by the external circuitry.
where
Parameter
V
V
V
B2B1
P
B2B1
F
= Emitter to Base–One Junction Diode Drop ( 0.45V @ 10 A)
= Peak Point Emitter Voltage
E(RMS)
= Interbase Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B2E
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Unijunction Transistor
is defined by equation:
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
E
Symbol
ar
r
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BB
BB
J
NTE6401
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= V
V
V
B2B1
B2B1
V
P
B2B1
– V
= 10V, Note 3
= 3V, I
Test Conditions
F
E
= 0
0.56
Min
4.7
0.1
Typ
7.0
–
–
–65 to +150 C
–65 to 125 C
Max
0.75
9.1
0.9
300mW
50mA
%/ C
Unit
k
30V
35V
–
2A
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NTE6401 Summary of contents
Page 1
... Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current (Max) D Low Emitter Reverse Current: .005 A (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T Power Dissipation (Note 1), P RMS Emitter Current, I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Emitter Saturation Voltage Modulated Interbase Current Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base–One Peak Pulse Voltage Note 4. Use pulse techniques: Pulse Width ~ 300 s, duty cycle to interbase modulation ...