NTE249 NTE ELECTRONICS, NTE249 Datasheet
NTE249
Manufacturer Part Number
NTE249
Description
Replacement Semiconductors TO-3 NPN DAR PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE249.pdf
(2 pages)
Specifications of NTE249
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
150W
Dc Collector Current
10A
Dc Current Gain Hfe
1000
Operating Temperature Range
-55°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE249 (NPN) & NTE250 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
C
= 3500 Typ @ I
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
(BR)CEO
I
I
I
CEO
CER
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CB
CB
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V, R
= 5V, I
= 50V, I
= 100V, R
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10A
C
Test Conditions
E
= 0
B
BE
= 0
BE
= 0, Note 1
= 1k , T
= 1k
A
= +150 C
Min
100
–
–
–
–
Typ
–55 to +200 C
–55 to +200 C
–
–
–
–
–
0.857W/ C
Max Unit
3.0
1.0
5.0
5.0
1.17 C/W
–
500mA
150W
100V
100V
mA
mA
mA
mA
16A
V
5V
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NTE249 Summary of contents
Page 1
... NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE249 B NTE250 B = +25 C unless otherwise specified) A Symbol Test Conditions 3V 10A 10A 40mA CE(sat 16A 80mA 3V 10A ...