NTE2716 NTE ELECTRONICS, NTE2716 Datasheet

NTE2716

Manufacturer Part Number

NTE2716

Description

Replacement Semiconductors DIP-24 16K EPROM 450

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2716.pdf (5 pages)

Specifications of NTE2716

Memory Size

16Kbit

Memory Configuration

16K X 8

Access Time

350ns

Memory Case Style

DIP

No. Of Pins

Operating Temperature Range

0Â°C To +70Â°C

Supply Voltage Nom, Vcc

Supply Voltage

Mounting Type

Through Hole

Eprom Type

Parallel UV Erasable

Supply Voltage Range

4.75V To 5.25V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description:

The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a

24–Lead DIP type package designed for system debug usage and similar applications requiring non-

volatile memory that could be reprogrammed periodically. The transparent lid on the package allows

the memory content to be erased with ultraviolet light.

The NTE2716 operates from a single power supply and has a static power down mode.

Features:

D Single 5V Power Supply

D Automatic Power–Down Mode (Standby)

D Organized as 2048 Bytes of 8Bits

D TTL Compatible During Read and Program

D Access Time: 350ns

D Output Enable Active Level is User Selectable

Absolute Maximum Ratings: (Note 1)

All Input or Output Voltages (with respect to V

Temperature Under Bias (V

Operating Temperature Range, T

Storage Temperature Range. T

Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-

Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages

Supply Voltage (with respect to V

eration should be restricted to “Recommended Operating Conditions”. Exposure to higher

than recommended voltages for extended periods of time could affect device reliability.

or electric fields; however, it is advised that normal precautions be taken to avoid application

of any voltage higher than maximum rated voltages to this high–impedance circuit.

NMOS, 16K UV Erasable PROM

= 5V)

stg

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Integrated Circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2716

)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65 to +125 C

–10 to +80 C

+28 to –0.3V

+6 to –0.3V

0 to +70 C

Related parts for NTE2716

NTE2716 Summary of contents

Page 1

... NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring non- volatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light ...

Page 2

Mode Selection: Mode 9–11, 13–17 DQ Read Data Out Output Disable High Z Standby High Z Program Data In Program Verify Data Out Program Inhibit High Z Note 3. In Read Mode Capacitance 1MHz, T ...

Page 3

AC Operating Conditions and Characteristics: Parameter Address Valid to Output Valid E/Progr to Output Valid Output Enable to Output Valid E/Progr to High Z Output Output Disable to High Z Output Data Hold from Address Note 6. Input Pulse Levels ...

Page 4

... The Standby mode is available to reduce active power dissipation. The outputs are in the high imped- ance state when the E/Progr input pin is high (V Erasing Instructions: The NTE2716 can be erased by exposure to high intensity shortwave ultraviolet light, with a wave- length of 2537 angstroms. The recommended integrated dose (i.e. UV–intensity X exposure time 15Ws/ example, using the “ ...

Page 5

1.290 (32.76) Max 24 1 .280 (7.11) Dia UV Window Glass Sealant .160 (4.06) Max .100 (2.54) Pin Connection Diagram ...

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