AUIRFZ44VZS International Rectifier, AUIRFZ44VZS Datasheet

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AUIRFZ44VZS

Manufacturer Part Number
AUIRFZ44VZS
Description
MOSFET N-CH 60V 57A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRFZ44VZS

Input Capacitance (ciss) @ Vds
1690pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Power - Max
92W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
57 A
Power Dissipation
92 W
Mounting Style
SMD/SMT
Gate Charge Qg
43 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRFZ44VZS
Manufacturer:
IR
Quantity:
12 500
Absolute Maximum Ratings
specifications is not implied.
Features
l
l
l
l
l
l
l
Description
HEXFET
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
HEXFET
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
I
I
I
P
V
E
E
I
E
T
T
R
R
www.irf.com
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
(Tested )
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
Power MOSFET utilizes the latest processing
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mount)
functional operation of the device at these or any other condition beyond those indicated in the
Ã
Parameter
Parameter
AUTOMOTIVE GRADE
GS
GS
g
@ 10V
@ 10V
i
G
h
Gate
d
G
S
D
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
V
R
I
D
AUIRFZ44VZS
(BR)DSS
DS(on)
D
-55 to + 175
AUIRFZ44VZS
Drain
D
Max.
0.61
D
230
± 20
110
2
57
40
92
73
Pak
G
®
max.
typ.
D
Power MOSFET
S
Max.
1.64
40
Source
PD - 96354
9.6m
12m
57A
S
60V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRFZ44VZS Summary of contents

Page 1

... Parameter 96354 AUIRFZ44VZS ® HEXFET Power MOSFET V 60V (BR)DSS R typ. 9.6m DS(on) max. 12m I 57A Pak AUIRFZ44VZS D S Drain Source Max. Units 230 92 W 0.61 W/°C ± 110 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) Typ. Max. Units – ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage Notes:  ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 60µs PULSE WIDTH 4. 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 2500 C oss = 2000 Ciss 1500 1000 500 ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 80 TOP Single Pulse BOTTOM 1% Duty Cycle 34A ...

Page 9

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

www.irf.com ...

Page 11

D Pak Tape & Reel Infomation TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 12

... Ordering Information Base part Package Type AUIRFZ44VZS D2Pak 12 Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRFZ44VZS AUIRF44VZSTRL AUIRFZ44VZSTRR www.irf.com ...

Page 13

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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