AUIRFZ44VZS International Rectifier, AUIRFZ44VZS Datasheet - Page 4

• Manufacturer Part Number: AUIRFZ44VZS
• Description: MOSFET N-CH 60V 57A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44VZS

• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 92 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 43 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
0.1
4.0
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
6.0
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
7.0
10
8.0
100
9.0
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
100
60
50
40
30
20
10
10
0
1
0.1
0
TOP
BOTTOM
Vs. Drain Current
V DS , Drain-to-Source Voltage (V)
10
I D, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
20
1
V DS = 15V
380µs PULSE WIDTH
4.5V
30
60µs PULSE WIDTH
Tj = 175°C
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T J = 175°C
T J = 25°C
40
10
50
100
60