AUIRLR3705Z International Rectifier, AUIRLR3705Z Datasheet - Page 2

• Manufacturer Part Number: AUIRLR3705Z
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3705Z

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 89A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
R
Repetitive rating; pulse width limited by
Limited by T
Pulse width
C
charging time as C
80% V
(BR)DSS
max. junction temperature. (See fig. 11).
recommended for use above this value.
G
oss
eff.
= 25 , I
eff. is a fixed capacitance that gives the same
/ T
DSS
J
.
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 42A, V
1.0ms; duty cycle
, starting T
Parameter
oss
while V
GS
=10V. Part not
Parameter
Parameter
J
™
= 25°C, L = 0.12mH
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
55
89
J
…
†
‡
ˆ
= 25°C (unless otherwise specified)
Limited by T
repetitive avalanche performance.
This value determined from sample failure population,
starting T
V
When mounted on 1" square PCB (FR-4 or G-10 Material) .
refer to application note #AN-994.
For recommended footprint and soldering techniques
0.053
GS
2900
1550
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
420
230
320
500
–––
–––
–––
6.5
4.5
7.5
44
13
22
17
33
70
21
14
=10V.
J
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
360
8.0
3.0
1.3
11
12
20
66
42
42
28
= 25°C, L = 0.12mH, R
Jmax
V/°C
, see Fig.12a, 12b, 15, 16 for typical
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 42A
= 42A
= 25°C, I
= 25°C, I
= 4.2
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 16V
= -16V
= 44V
= 5.0V
= 28V
= 5.0V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
G
D
Conditions
Conditions
Conditions
e
e
D
DS
S
F
= 25 , I
D
D
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 42A, V
= 42A, V
= 42A
= 42A
= 34A
= 21A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
AS
e
D
e
e
= 1mA
DD
GS
= 42A,
J
= 125°C
= 28V
G
= 0V
f
e
S
D