AUIRLR3705Z International Rectifier, AUIRLR3705Z Datasheet - Page 8

MOSFET N-CH 55V 42A DPAK

AUIRLR3705Z

Manufacturer Part Number
AUIRLR3705Z
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRLR3705Z

Input Capacitance (ciss) @ Vds
2900pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
89A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0065ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
130W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLR3705Z
Manufacturer:
IR
Quantity:
12 500
8
1000
100
0.1
120
100
10
80
60
40
20
1
1.0E-06
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
vs. Temperature
0.01
0.05
0.10
TOP
BOTTOM 1% Duty Cycle
I D = 42A
75
1.0E-05
Fig 15. Typical Avalanche Current vs.Pulsewidth
100
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
t
D = Duty cycle in avalanche = t
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
Z
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
1.0E-03
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
www.irf.com
thJC
tav
jmax
1.0E-01
is

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