AUIRL1404ZSTRL International Rectifier, AUIRL1404ZSTRL Datasheet - Page 2

• Manufacturer Part Number: AUIRL1404ZSTRL
• Description: MOSFET N-CH 40V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRL1404ZSTRL

• Input Capacitance (ciss) @ Vds: 5080pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.1 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 180 A
• Power Dissipation: 200 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Note
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
eff.
 through Š ,
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
are on page 3
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.4
40
0.034
5080
3310
1280
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
970
570
870
–––
–––
–––
2.5
4.5
7.5
75
28
40
19
30
49
26
18
-200
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
720
3.1
4.7
5.9
2.7
1.3
20
39
27
V/°C
m
µA
nA
nC
nH 6mm (0.25in.)
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 75A* *
= 75A* *
= 25°C, I
= 25°C, I
= 4.0
= V
= 10V, I
= 40V, V
= 40V, V
= 32V
= 20V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.5V, I
= 16V
= -16V
= 5.0V
= 5.0V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
D
DS
S
F
Conditions
D
D
Conditions
Conditions
DS
DS
= 250µA
D
D
GS
GS
= 250µA
= 75A* * , V
= 75A* * , V
= 75A* *
= 75A
= 40A
= 40A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
D
e
e
e
= 1mA
* *
J
G
= 125°C
DD
GS
f
= 20V
G
= 0V
D
S
e
S
D