AUIRF3305 International Rectifier, AUIRF3305 Datasheet

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AUIRF3305

Manufacturer Part Number
AUIRF3305
Description
MOSFET N-CH 55V 140A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRF3305

Input Capacitance (ciss) @ Vds
3650pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
140A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
N Channel
Continuous Drain Current Id
140A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.008ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
330W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF3305
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3305L
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3305S
Manufacturer:
IR
Quantity:
12 500
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Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
Thermal Resistance
HEXFET
*Qualification standards can be found at http://www.irf.com/
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
@ T
@ T
JC
CS
JA
@T
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
(Tested )
C
C
C
= 25°C
= 100°C
= 25°C
®
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
i
Ã
AUTOMOTIVE MOSFET
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
dh
d
G
Gate
G
Typ.
0.50
–––
–––
D
S
See Fig.12a, 12b, 15, 16
TO-220AB
10 lbf
Drain
-55 to + 175
D
HEXFET
y
Max.
in (1.1N
V
R
I
300
± 20
140
560
330
470
860
99
2.2
D
AUIRF3305
(BR)DSS
DS(on)
y
m)
®
Max.
0.45
–––
62
max.
Source
Power MOSFET
S
PD - 96336
8m
140A
55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRF3305 Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE MOSFET Parameter @ 10V GS @ 10V Ã g Parameter i AUIRF3305 ® HEXFET Power MOSFET V D (BR)DSS R max. DS(on TO-220AB Gate Drain Source Max. ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant www.irf.com † Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 175°C ...

Page 5

0V, C iss = SHORTED 6000 C rss = oss = 5000 4000 3000 2000 1000 ...

Page 6

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE ...

Page 7

D.U 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 8

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-06 1.0E-05 500 TOP BOTTOM 1% Duty Cycle 75A 400 300 200 100 100 Starting Junction Temperature ...

Page 9

D.U.T + ƒ ‚ -  SD Fig 17. www.irf.com Driver Gate Drive D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage Inductor Curent - for N-Channel HEXFET Fig 18a. Switching Time Test ...

Page 10

10 www.irf.com ...

Page 11

... Ordering Information Base part Package Type AUIRF3305 TO-220 www.irf.com Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF3305 11 ...

Page 12

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

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