AUIRF3305 International Rectifier, AUIRF3305 Datasheet - Page 5

• Manufacturer Part Number: AUIRF3305
• Description: MOSFET N-CH 55V 140A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3305

• Input Capacitance (ciss) @ Vds: 3650pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 140A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.008ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 330W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
7000
6000
5000
4000
3000
2000
1000
100.0
10.0
1.0
0.1
0
Fig 7. Typical Source-Drain Diode
1
0.0
Fig 5. Typical Capacitance Vs.
T J = 175°C
V DS , Drain-to-Source Voltage (V)
0.4
V SD , Source-to-Drain Voltage (V)
Drain-to-Source Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.8
T J = 25°C
Ciss
Coss
Crss
1.2
f = 1 MHZ
10
1.6
V GS = 0V
2.0
2.4
100
10000
1000
100
0.1
20
16
12
10
8
4
0
1
0
1
I D = 75A
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
Gate-to-Source Voltage
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
VDS= 28V
80
1msec
DC
100µsec
10msec
100
120
1000
160
5